InGaAs superconducting JFET's with Nb electrodes

Keyphrases

• Gate Control 100%
• InGaAs 100%
• Molecular Beam Epitaxy 50%
• InP Substrate 50%
• Epitaxially Grown 50%
• Superconducting Properties 50%
• Reactive Ion Etching 50%
• Superconductor 50%
• P-n Junction 50%
• Sub-micrometer 50%
• Field-effect Device 50%
• Channel Material 50%
• Semiconductor Contacts 50%

Engineering

• Indium Gallium Arsenide 100%
• Superconductor 100%
• Field Effect Transistor 50%
• Drain Electrode 50%
• Control Gate 50%
• Channel Layer 50%

Material Science

• Superconducting Material 100%
• Indium Gallium Arsenide 100%
• Molecular Beam Epitaxy 50%
• Field Effect Transistor 50%
• Reactive Ion Etching 50%