InGaAs/InAlAs avalanche photodiode with undepleted absorber

Ning Li, Rubin Sidhu, Xiaowei Li, Feng Ma, Xiaoguang Zheng, Shuling Wang, Gauri Karve, Stephane Demiguel, Archie L. Holmes, Joe C. Campbell

Research output: Contribution to journalArticlepeer-review

60 Scopus citations


The study of an avalanche photodiode with an undepleted p-type InGaAs absorption region and a thin InAlAs multiplication layer was performed. The purpose for utilizing an undepleted absorption layer was to reduce the dark current. The demonstration of a drak current below 1 nA at a gain of 10 and a gain-bandwidth product of 160 GHz was done.

Original languageEnglish (US)
Pages (from-to)2175-2177
Number of pages3
JournalApplied Physics Letters
Issue number13
StatePublished - Mar 31 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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