InGaAs/InAlAs avalanche photodiode with undepleted absorber

Ning Li; Rubin Sidhu; Xiaowei Li; Feng Ma; Xiaoguang Zheng; Shuling Wang; Gauri Karve; Stephane Demiguel; Archie L. Holmes; Joe C. Campbell

doi:10.1063/1.1559437

InGaAs/InAlAs avalanche photodiode with undepleted absorber

Ning Li, Rubin Sidhu, Xiaowei Li, Feng Ma, Xiaoguang Zheng, Shuling Wang, Gauri Karve, Stephane Demiguel, Archie L. Holmes, Joe C. Campbell

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

The study of an avalanche photodiode with an undepleted p-type InGaAs absorption region and a thin InAlAs multiplication layer was performed. The purpose for utilizing an undepleted absorption layer was to reduce the dark current. The demonstration of a drak current below 1 nA at a gain of 10 and a gain-bandwidth product of 160 GHz was done.

Original language	English (US)
Pages (from-to)	2175-2177
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	13
DOIs	https://doi.org/10.1063/1.1559437
State	Published - Mar 31 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1559437

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title = "InGaAs/InAlAs avalanche photodiode with undepleted absorber",

abstract = "The study of an avalanche photodiode with an undepleted p-type InGaAs absorption region and a thin InAlAs multiplication layer was performed. The purpose for utilizing an undepleted absorption layer was to reduce the dark current. The demonstration of a drak current below 1 nA at a gain of 10 and a gain-bandwidth product of 160 GHz was done.",

author = "Ning Li and Rubin Sidhu and Xiaowei Li and Feng Ma and Xiaoguang Zheng and Shuling Wang and Gauri Karve and Stephane Demiguel and Holmes, {Archie L.} and Campbell, {Joe C.}",

year = "2003",

month = mar,

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doi = "10.1063/1.1559437",

language = "English (US)",

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pages = "2175--2177",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - InGaAs/InAlAs avalanche photodiode with undepleted absorber

AU - Li, Ning

AU - Sidhu, Rubin

AU - Li, Xiaowei

AU - Ma, Feng

AU - Zheng, Xiaoguang

AU - Wang, Shuling

AU - Karve, Gauri

AU - Demiguel, Stephane

AU - Holmes, Archie L.

AU - Campbell, Joe C.

PY - 2003/3/31

Y1 - 2003/3/31

N2 - The study of an avalanche photodiode with an undepleted p-type InGaAs absorption region and a thin InAlAs multiplication layer was performed. The purpose for utilizing an undepleted absorption layer was to reduce the dark current. The demonstration of a drak current below 1 nA at a gain of 10 and a gain-bandwidth product of 160 GHz was done.

AB - The study of an avalanche photodiode with an undepleted p-type InGaAs absorption region and a thin InAlAs multiplication layer was performed. The purpose for utilizing an undepleted absorption layer was to reduce the dark current. The demonstration of a drak current below 1 nA at a gain of 10 and a gain-bandwidth product of 160 GHz was done.

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UR - http://www.scopus.com/inward/citedby.url?scp=0037475023&partnerID=8YFLogxK

U2 - 10.1063/1.1559437

DO - 10.1063/1.1559437

M3 - Article

AN - SCOPUS:0037475023

SN - 0003-6951

VL - 82

SP - 2175

EP - 2177

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

InGaAs/InAlAs avalanche photodiode with undepleted absorber

Abstract

All Science Journal Classification (ASJC) codes

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