InGaAs/InAlAs avalanche photodiode with undepleted absorber

Ning Li; Rubin Sidhu; Xiaowei Li; Feng Ma; Xiaoguang Zheng; Shuling Wang; Gauri Karve; Stephane Demiguel; Archie L. Holmes; Joe C. Campbell

doi:10.1063/1.1559437

InGaAs/InAlAs avalanche photodiode with undepleted absorber

Ning Li
, Rubin Sidhu
, Xiaowei Li
, Feng Ma
, Xiaoguang Zheng
, Shuling Wang
, Gauri Karve
, Stephane Demiguel
, Archie L. Holmes
, Joe C. Campbell

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

64 Scopus citations

Abstract

The study of an avalanche photodiode with an undepleted p-type InGaAs absorption region and a thin InAlAs multiplication layer was performed. The purpose for utilizing an undepleted absorption layer was to reduce the dark current. The demonstration of a drak current below 1 nA at a gain of 10 and a gain-bandwidth product of 160 GHz was done.

Original language	English (US)
Pages (from-to)	2175-2177
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	13
DOIs	https://doi.org/10.1063/1.1559437
State	Published - Mar 31 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1559437

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@article{d5509b036f404d39ac1e101711bc8131,

title = "InGaAs/InAlAs avalanche photodiode with undepleted absorber",

abstract = "The study of an avalanche photodiode with an undepleted p-type InGaAs absorption region and a thin InAlAs multiplication layer was performed. The purpose for utilizing an undepleted absorption layer was to reduce the dark current. The demonstration of a drak current below 1 nA at a gain of 10 and a gain-bandwidth product of 160 GHz was done.",

author = "Ning Li and Rubin Sidhu and Xiaowei Li and Feng Ma and Xiaoguang Zheng and Shuling Wang and Gauri Karve and Stephane Demiguel and Holmes, \{Archie L.\} and Campbell, \{Joe C.\}",

year = "2003",

month = mar,

day = "31",

doi = "10.1063/1.1559437",

language = "English (US)",

volume = "82",

pages = "2175--2177",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - InGaAs/InAlAs avalanche photodiode with undepleted absorber

AU - Li, Ning

AU - Sidhu, Rubin

AU - Li, Xiaowei

AU - Ma, Feng

AU - Zheng, Xiaoguang

AU - Wang, Shuling

AU - Karve, Gauri

AU - Demiguel, Stephane

AU - Holmes, Archie L.

AU - Campbell, Joe C.

PY - 2003/3/31

Y1 - 2003/3/31

N2 - The study of an avalanche photodiode with an undepleted p-type InGaAs absorption region and a thin InAlAs multiplication layer was performed. The purpose for utilizing an undepleted absorption layer was to reduce the dark current. The demonstration of a drak current below 1 nA at a gain of 10 and a gain-bandwidth product of 160 GHz was done.

AB - The study of an avalanche photodiode with an undepleted p-type InGaAs absorption region and a thin InAlAs multiplication layer was performed. The purpose for utilizing an undepleted absorption layer was to reduce the dark current. The demonstration of a drak current below 1 nA at a gain of 10 and a gain-bandwidth product of 160 GHz was done.

UR - https://www.scopus.com/pages/publications/0037475023

UR - https://www.scopus.com/pages/publications/0037475023#tab=citedBy

U2 - 10.1063/1.1559437

DO - 10.1063/1.1559437

M3 - Article

AN - SCOPUS:0037475023

SN - 0003-6951

VL - 82

SP - 2175

EP - 2177

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

InGaAs/InAlAs avalanche photodiode with undepleted absorber

Abstract

All Science Journal Classification (ASJC) codes

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