InGaN double-heterostructures and DH-LEDS on HVPE GaN-on-sapphire substrates

K. S. Boutros; J. S. Flynn; V. Phanse; R. P. Vaudo; G. M. Smith; J. M. Redwing; T. R. Tolliver; N. G. Anderson

doi:10.1557/proc-482-1047

InGaN double-heterostructures and DH-LEDS on HVPE GaN-on-sapphire substrates

K. S. Boutros, J. S. Flynn, V. Phanse, R. P. Vaudo, G. M. Smith, J. M. Redwing, T. R. Tolliver, N. G. Anderson

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

We report on the growth of InGaN films, and the fabrication and characterization of GaN homojunction LEDs and InGaN double heterostructure (DH) LEDs on HVPE GaN-on-sapphire substrates. The use of these substrates facilitates the III-nitrides growth process, as it avoids the use of complicated buffer layers. We have achieved InGaN films with strong and sharp band-to-band photoluminescence (PL) from 370 to 540 nm. Typical In_0.09Ga_0.91N/GaN DH films had double-crystal XRD FWHM approximately 300 arcsec, and 400 nm peak PL emission with FWHM approximately 100 meV. DH-LEDs were fabricated with InGaN layers with various compositions, and produced strong electroluminescence (EL) in the blue and blue/green regions.

Original language	English (US)
Pages (from-to)	1047-1052
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	482
DOIs	https://doi.org/10.1557/proc-482-1047
State	Published - 1997
Event	Proceedings of the 1997 MRS Fall Meeting - Boston, MA, USA Duration: Dec 1 1997 → Dec 4 1997

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/proc-482-1047

Cite this

@article{84d51d4280fb4ca488f5fdd67da07c77,

title = "InGaN double-heterostructures and DH-LEDS on HVPE GaN-on-sapphire substrates",

abstract = "We report on the growth of InGaN films, and the fabrication and characterization of GaN homojunction LEDs and InGaN double heterostructure (DH) LEDs on HVPE GaN-on-sapphire substrates. The use of these substrates facilitates the III-nitrides growth process, as it avoids the use of complicated buffer layers. We have achieved InGaN films with strong and sharp band-to-band photoluminescence (PL) from 370 to 540 nm. Typical In0.09Ga0.91N/GaN DH films had double-crystal XRD FWHM approximately 300 arcsec, and 400 nm peak PL emission with FWHM approximately 100 meV. DH-LEDs were fabricated with InGaN layers with various compositions, and produced strong electroluminescence (EL) in the blue and blue/green regions.",

author = "Boutros, {K. S.} and Flynn, {J. S.} and V. Phanse and Vaudo, {R. P.} and Smith, {G. M.} and Redwing, {J. M.} and Tolliver, {T. R.} and Anderson, {N. G.}",

year = "1997",

doi = "10.1557/proc-482-1047",

language = "English (US)",

volume = "482",

pages = "1047--1052",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Fall Meeting ; Conference date: 01-12-1997 Through 04-12-1997",

}

TY - JOUR

T1 - InGaN double-heterostructures and DH-LEDS on HVPE GaN-on-sapphire substrates

AU - Boutros, K. S.

AU - Flynn, J. S.

AU - Phanse, V.

AU - Vaudo, R. P.

AU - Smith, G. M.

AU - Redwing, J. M.

AU - Tolliver, T. R.

AU - Anderson, N. G.

PY - 1997

Y1 - 1997

N2 - We report on the growth of InGaN films, and the fabrication and characterization of GaN homojunction LEDs and InGaN double heterostructure (DH) LEDs on HVPE GaN-on-sapphire substrates. The use of these substrates facilitates the III-nitrides growth process, as it avoids the use of complicated buffer layers. We have achieved InGaN films with strong and sharp band-to-band photoluminescence (PL) from 370 to 540 nm. Typical In0.09Ga0.91N/GaN DH films had double-crystal XRD FWHM approximately 300 arcsec, and 400 nm peak PL emission with FWHM approximately 100 meV. DH-LEDs were fabricated with InGaN layers with various compositions, and produced strong electroluminescence (EL) in the blue and blue/green regions.

AB - We report on the growth of InGaN films, and the fabrication and characterization of GaN homojunction LEDs and InGaN double heterostructure (DH) LEDs on HVPE GaN-on-sapphire substrates. The use of these substrates facilitates the III-nitrides growth process, as it avoids the use of complicated buffer layers. We have achieved InGaN films with strong and sharp band-to-band photoluminescence (PL) from 370 to 540 nm. Typical In0.09Ga0.91N/GaN DH films had double-crystal XRD FWHM approximately 300 arcsec, and 400 nm peak PL emission with FWHM approximately 100 meV. DH-LEDs were fabricated with InGaN layers with various compositions, and produced strong electroluminescence (EL) in the blue and blue/green regions.

UR - http://www.scopus.com/inward/record.url?scp=0031345065&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031345065&partnerID=8YFLogxK

U2 - 10.1557/proc-482-1047

DO - 10.1557/proc-482-1047

M3 - Conference article

AN - SCOPUS:0031345065

SN - 0272-9172

VL - 482

SP - 1047

EP - 1052

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Meeting

Y2 - 1 December 1997 through 4 December 1997

ER -

InGaN double-heterostructures and DH-LEDS on HVPE GaN-on-sapphire substrates

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this