InGaN/GaN double heterostructure laser with cleaved facets

D. Stocker; E. F. Schubert; W. Grieshaber; K. S. Boutros; J. S. Flynn; R. P. Vaudo; V. M. Phanse; J. M. Redwing

doi:10.1117/12.304461

InGaN/GaN double heterostructure laser with cleaved facets

D. Stocker, E. F. Schubert, W. Grieshaber, K. S. Boutros, J. S. Flynn, R. P. Vaudo, V. M. Phanse, J. M. Redwing

Research output: Contribution to journal › Conference article › peer-review

Abstract

Laser action is demonstrated in InGaN/GaN double heterostructures with cleaved facets. Hydride vapor phase epitaxy is used to grow a 10-μm-thick buffer layer of GaN on (0001) sapphire, and metal-organic vapor phase epitaxy is used to subsequently grow a GaN/In_0.09Ga_0.91N/GaN double heterostructure. One-mm-long cavities are produced by cleaving the structure along the (1 0 1̄ 0) plane of the sapphire substrate. A pulsed Nitrogen laser is used for optical excitation. At room temperature, the laser threshold occurs at an incident power density of 1.3 MW/cm². Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarized.

Original language	English (US)
Pages (from-to)	122-127
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3284
DOIs	https://doi.org/10.1117/12.304461
State	Published - 1998
Event	In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II - San Jose, CA, United States Duration: Jan 26 1998 → Jan 28 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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@article{25c039a5dc4e42908edbc7c943613ab0,

title = "InGaN/GaN double heterostructure laser with cleaved facets",

abstract = "Laser action is demonstrated in InGaN/GaN double heterostructures with cleaved facets. Hydride vapor phase epitaxy is used to grow a 10-μm-thick buffer layer of GaN on (0001) sapphire, and metal-organic vapor phase epitaxy is used to subsequently grow a GaN/In0.09Ga0.91N/GaN double heterostructure. One-mm-long cavities are produced by cleaving the structure along the (1 0 {\=1} 0) plane of the sapphire substrate. A pulsed Nitrogen laser is used for optical excitation. At room temperature, the laser threshold occurs at an incident power density of 1.3 MW/cm2. Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarized.",

author = "D. Stocker and Schubert, {E. F.} and W. Grieshaber and Boutros, {K. S.} and Flynn, {J. S.} and Vaudo, {R. P.} and Phanse, {V. M.} and Redwing, {J. M.}",

year = "1998",

doi = "10.1117/12.304461",

language = "English (US)",

volume = "3284",

pages = "122--127",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II ; Conference date: 26-01-1998 Through 28-01-1998",

}

TY - JOUR

T1 - InGaN/GaN double heterostructure laser with cleaved facets

AU - Stocker, D.

AU - Schubert, E. F.

AU - Grieshaber, W.

AU - Boutros, K. S.

AU - Flynn, J. S.

AU - Vaudo, R. P.

AU - Phanse, V. M.

AU - Redwing, J. M.

PY - 1998

Y1 - 1998

N2 - Laser action is demonstrated in InGaN/GaN double heterostructures with cleaved facets. Hydride vapor phase epitaxy is used to grow a 10-μm-thick buffer layer of GaN on (0001) sapphire, and metal-organic vapor phase epitaxy is used to subsequently grow a GaN/In0.09Ga0.91N/GaN double heterostructure. One-mm-long cavities are produced by cleaving the structure along the (1 0 1̄ 0) plane of the sapphire substrate. A pulsed Nitrogen laser is used for optical excitation. At room temperature, the laser threshold occurs at an incident power density of 1.3 MW/cm2. Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarized.

AB - Laser action is demonstrated in InGaN/GaN double heterostructures with cleaved facets. Hydride vapor phase epitaxy is used to grow a 10-μm-thick buffer layer of GaN on (0001) sapphire, and metal-organic vapor phase epitaxy is used to subsequently grow a GaN/In0.09Ga0.91N/GaN double heterostructure. One-mm-long cavities are produced by cleaving the structure along the (1 0 1̄ 0) plane of the sapphire substrate. A pulsed Nitrogen laser is used for optical excitation. At room temperature, the laser threshold occurs at an incident power density of 1.3 MW/cm2. Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarized.

UR - http://www.scopus.com/inward/record.url?scp=0032224777&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032224777&partnerID=8YFLogxK

U2 - 10.1117/12.304461

DO - 10.1117/12.304461

M3 - Conference article

AN - SCOPUS:0032224777

SN - 0277-786X

VL - 3284

SP - 122

EP - 127

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II

Y2 - 26 January 1998 through 28 January 1998

ER -

InGaN/GaN double heterostructure laser with cleaved facets

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