InGaN/GaN double heterostructure laser with cleaved facets

D. Stocker; E. F. Schubert; W. Grieshaber; K. S. Boutros; J. S. Flynn; R. P. Vaudo; V. M. Phanse; J. M. Redwing

doi:10.1117/12.304461

InGaN/GaN double heterostructure laser with cleaved facets

D. Stocker
, E. F. Schubert
, W. Grieshaber
, K. S. Boutros
, J. S. Flynn
, R. P. Vaudo
, V. M. Phanse
, J. M. Redwing

Research output: Contribution to journal › Conference article › peer-review

Abstract

Laser action is demonstrated in InGaN/GaN double heterostructures with cleaved facets. Hydride vapor phase epitaxy is used to grow a 10-μm-thick buffer layer of GaN on (0001) sapphire, and metal-organic vapor phase epitaxy is used to subsequently grow a GaN/In_0.09Ga_0.91N/GaN double heterostructure. One-mm-long cavities are produced by cleaving the structure along the (1 0 1̄ 0) plane of the sapphire substrate. A pulsed Nitrogen laser is used for optical excitation. At room temperature, the laser threshold occurs at an incident power density of 1.3 MW/cm². Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarized.

Original language	English (US)
Pages (from-to)	122-127
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3284
DOIs	https://doi.org/10.1117/12.304461
State	Published - 1998
Event	In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II - San Jose, CA, United States Duration: Jan 26 1998 → Jan 28 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.304461

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@article{25c039a5dc4e42908edbc7c943613ab0,

title = "InGaN/GaN double heterostructure laser with cleaved facets",

abstract = "Laser action is demonstrated in InGaN/GaN double heterostructures with cleaved facets. Hydride vapor phase epitaxy is used to grow a 10-μm-thick buffer layer of GaN on (0001) sapphire, and metal-organic vapor phase epitaxy is used to subsequently grow a GaN/In0.09Ga0.91N/GaN double heterostructure. One-mm-long cavities are produced by cleaving the structure along the (1 0 {\=1} 0) plane of the sapphire substrate. A pulsed Nitrogen laser is used for optical excitation. At room temperature, the laser threshold occurs at an incident power density of 1.3 MW/cm2. Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarized.",

author = "D. Stocker and Schubert, \{E. F.\} and W. Grieshaber and Boutros, \{K. S.\} and Flynn, \{J. S.\} and Vaudo, \{R. P.\} and Phanse, \{V. M.\} and Redwing, \{J. M.\}",

year = "1998",

doi = "10.1117/12.304461",

language = "English (US)",

volume = "3284",

pages = "122--127",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II ; Conference date: 26-01-1998 Through 28-01-1998",

}

TY - JOUR

T1 - InGaN/GaN double heterostructure laser with cleaved facets

AU - Stocker, D.

AU - Schubert, E. F.

AU - Grieshaber, W.

AU - Boutros, K. S.

AU - Flynn, J. S.

AU - Vaudo, R. P.

AU - Phanse, V. M.

AU - Redwing, J. M.

PY - 1998

Y1 - 1998

N2 - Laser action is demonstrated in InGaN/GaN double heterostructures with cleaved facets. Hydride vapor phase epitaxy is used to grow a 10-μm-thick buffer layer of GaN on (0001) sapphire, and metal-organic vapor phase epitaxy is used to subsequently grow a GaN/In0.09Ga0.91N/GaN double heterostructure. One-mm-long cavities are produced by cleaving the structure along the (1 0 1̄ 0) plane of the sapphire substrate. A pulsed Nitrogen laser is used for optical excitation. At room temperature, the laser threshold occurs at an incident power density of 1.3 MW/cm2. Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarized.

AB - Laser action is demonstrated in InGaN/GaN double heterostructures with cleaved facets. Hydride vapor phase epitaxy is used to grow a 10-μm-thick buffer layer of GaN on (0001) sapphire, and metal-organic vapor phase epitaxy is used to subsequently grow a GaN/In0.09Ga0.91N/GaN double heterostructure. One-mm-long cavities are produced by cleaving the structure along the (1 0 1̄ 0) plane of the sapphire substrate. A pulsed Nitrogen laser is used for optical excitation. At room temperature, the laser threshold occurs at an incident power density of 1.3 MW/cm2. Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarized.

UR - https://www.scopus.com/pages/publications/0032224777

UR - https://www.scopus.com/pages/publications/0032224777#tab=citedBy

U2 - 10.1117/12.304461

DO - 10.1117/12.304461

M3 - Conference article

AN - SCOPUS:0032224777

SN - 0277-786X

VL - 3284

SP - 122

EP - 127

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II

Y2 - 26 January 1998 through 28 January 1998

ER -

InGaN/GaN double heterostructure laser with cleaved facets

Abstract

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