InGaN/GaN double heterostructure LEDs on HVPE GaN-on-sapphire substrates

G. M. Smith, K. S. Boutros, J. W. Szewczuk, J. S. Flynn, V. M. Phanse, R. P. Vaudo, J. M. Redwing

Research output: Contribution to journalConference articlepeer-review


InGaN double heterostructure light emitting diodes (DH-LEDs) were fabricated on hydride vapor phase epitaxy (HVPE) GaN-on-sapphire substrates. These substrates consisted of a thick (approximately 10 μm) HVPE GaN layer grown directly on sapphire and eliminated the need for the growth of a low-temperature buffer layer for GaN epitaxy on sapphire. Homojunction and DH-LEDs have been fabricated with various composition InGaN active regions resulting in strong electroluminescence in the blue, green, and yellow portion of the visible spectra. These devices had turn-on voltages as low as 3.6 volts.

Original languageEnglish (US)
Pages (from-to)8-16
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 1998
EventLight-Emitting Diodes: Research, Manufacturing, and Applications II - San Jose, CA, United States
Duration: Jan 28 1998Jan 29 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Applied Mathematics
  • Electrical and Electronic Engineering
  • Computer Science Applications


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