InGaN/GaN double heterostructure LEDs on HVPE GaN-on-sapphire substrates

G. M. Smith; K. S. Boutros; J. W. Szewczuk; J. S. Flynn; V. M. Phanse; R. P. Vaudo; J. M. Redwing

doi:10.1117/12.304424

InGaN/GaN double heterostructure LEDs on HVPE GaN-on-sapphire substrates

G. M. Smith, K. S. Boutros, J. W. Szewczuk, J. S. Flynn, V. M. Phanse, R. P. Vaudo, J. M. Redwing

Research output: Contribution to journal › Conference article › peer-review

Abstract

InGaN double heterostructure light emitting diodes (DH-LEDs) were fabricated on hydride vapor phase epitaxy (HVPE) GaN-on-sapphire substrates. These substrates consisted of a thick (approximately 10 μm) HVPE GaN layer grown directly on sapphire and eliminated the need for the growth of a low-temperature buffer layer for GaN epitaxy on sapphire. Homojunction and DH-LEDs have been fabricated with various composition InGaN active regions resulting in strong electroluminescence in the blue, green, and yellow portion of the visible spectra. These devices had turn-on voltages as low as 3.6 volts.

Original language	English (US)
Pages (from-to)	8-16
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3279
DOIs	https://doi.org/10.1117/12.304424
State	Published - 1998
Event	Light-Emitting Diodes: Research, Manufacturing, and Applications II - San Jose, CA, United States Duration: Jan 28 1998 → Jan 29 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Applied Mathematics
Electrical and Electronic Engineering
Computer Science Applications

Access to Document

10.1117/12.304424

Cite this

@article{393265161ad4442d8dc3ba650b98354a,

title = "InGaN/GaN double heterostructure LEDs on HVPE GaN-on-sapphire substrates",

abstract = "InGaN double heterostructure light emitting diodes (DH-LEDs) were fabricated on hydride vapor phase epitaxy (HVPE) GaN-on-sapphire substrates. These substrates consisted of a thick (approximately 10 μm) HVPE GaN layer grown directly on sapphire and eliminated the need for the growth of a low-temperature buffer layer for GaN epitaxy on sapphire. Homojunction and DH-LEDs have been fabricated with various composition InGaN active regions resulting in strong electroluminescence in the blue, green, and yellow portion of the visible spectra. These devices had turn-on voltages as low as 3.6 volts.",

author = "Smith, {G. M.} and Boutros, {K. S.} and Szewczuk, {J. W.} and Flynn, {J. S.} and Phanse, {V. M.} and Vaudo, {R. P.} and Redwing, {J. M.}",

year = "1998",

doi = "10.1117/12.304424",

language = "English (US)",

volume = "3279",

pages = "8--16",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Light-Emitting Diodes: Research, Manufacturing, and Applications II ; Conference date: 28-01-1998 Through 29-01-1998",

}

TY - JOUR

T1 - InGaN/GaN double heterostructure LEDs on HVPE GaN-on-sapphire substrates

AU - Smith, G. M.

AU - Boutros, K. S.

AU - Szewczuk, J. W.

AU - Flynn, J. S.

AU - Phanse, V. M.

AU - Vaudo, R. P.

AU - Redwing, J. M.

PY - 1998

Y1 - 1998

N2 - InGaN double heterostructure light emitting diodes (DH-LEDs) were fabricated on hydride vapor phase epitaxy (HVPE) GaN-on-sapphire substrates. These substrates consisted of a thick (approximately 10 μm) HVPE GaN layer grown directly on sapphire and eliminated the need for the growth of a low-temperature buffer layer for GaN epitaxy on sapphire. Homojunction and DH-LEDs have been fabricated with various composition InGaN active regions resulting in strong electroluminescence in the blue, green, and yellow portion of the visible spectra. These devices had turn-on voltages as low as 3.6 volts.

AB - InGaN double heterostructure light emitting diodes (DH-LEDs) were fabricated on hydride vapor phase epitaxy (HVPE) GaN-on-sapphire substrates. These substrates consisted of a thick (approximately 10 μm) HVPE GaN layer grown directly on sapphire and eliminated the need for the growth of a low-temperature buffer layer for GaN epitaxy on sapphire. Homojunction and DH-LEDs have been fabricated with various composition InGaN active regions resulting in strong electroluminescence in the blue, green, and yellow portion of the visible spectra. These devices had turn-on voltages as low as 3.6 volts.

UR - http://www.scopus.com/inward/record.url?scp=0032226169&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032226169&partnerID=8YFLogxK

U2 - 10.1117/12.304424

DO - 10.1117/12.304424

M3 - Conference article

AN - SCOPUS:0032226169

SN - 0277-786X

VL - 3279

SP - 8

EP - 16

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Light-Emitting Diodes: Research, Manufacturing, and Applications II

Y2 - 28 January 1998 through 29 January 1998

ER -

InGaN/GaN double heterostructure LEDs on HVPE GaN-on-sapphire substrates

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this