Abstract
InGaN double heterostructure light emitting diodes (DH-LEDs) were fabricated on hydride vapor phase epitaxy (HVPE) GaN-on-sapphire substrates. These substrates consisted of a thick (approximately 10 μm) HVPE GaN layer grown directly on sapphire and eliminated the need for the growth of a low-temperature buffer layer for GaN epitaxy on sapphire. Homojunction and DH-LEDs have been fabricated with various composition InGaN active regions resulting in strong electroluminescence in the blue, green, and yellow portion of the visible spectra. These devices had turn-on voltages as low as 3.6 volts.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 8-16 |
| Number of pages | 9 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3279 |
| DOIs | |
| State | Published - 1998 |
| Event | Light-Emitting Diodes: Research, Manufacturing, and Applications II - San Jose, CA, United States Duration: Jan 28 1998 → Jan 29 1998 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Applied Mathematics
- Electrical and Electronic Engineering
- Computer Science Applications
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