Skip to main navigation
Skip to search
Skip to main content
Penn State Home
Help & FAQ
Home
Researchers
Research output
Research units
Equipment
Grants & Projects
Prizes
Activities
Search by expertise, name or affiliation
InGaN/GaN double heterostructure LEDs on HVPE GaN-on-sapphire substrates
G. M. Smith
, K. S. Boutros
, J. W. Szewczuk
, J. S. Flynn
, V. M. Phanse
, R. P. Vaudo
,
J. M. Redwing
Materials Science and Engineering
Materials Research Institute (MRI)
Research output
:
Contribution to journal
›
Conference article
›
peer-review
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'InGaN/GaN double heterostructure LEDs on HVPE GaN-on-sapphire substrates'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
Hydride Vapor Phase Epitaxy
100%
Indium Gallium Nitride (InGaN)
100%
Double Heterostructure
100%
Sapphire Substrate
100%
GaN-on-sapphire
100%
Sapphire
66%
Light-emitting Diodes
66%
Visible Spectrum
33%
Low Temperature
33%
Active Regions
33%
Buffer Layer
33%
Blue-green
33%
Electroluminescence
33%
GaN Layers
33%
Material Science
Heterojunction
100%
Sapphire
100%
Vapor Phase Epitaxy
100%
Hydride
100%
Light-Emitting Diode
50%
Epitaxy
25%
Buffer Layer
25%
Electroluminescence
25%
Engineering
Heterojunctions
100%
Sapphire Substrate
100%
Light-Emitting Diode
66%
Low-Temperature
33%
Buffer Layer
33%
Active Region
33%
Homojunction
33%
Chemical Engineering
Vapor Phase Epitaxy
100%
Epitaxial Growth
33%