Insinhts on the DC characterization of ferroelectric field-effect-transistors

Matthew Jerry, Jeffrey A. Smith, Kai Ni, Atanu Saha, Sumeet Gupta, Suman Datta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

14 Scopus citations


In this work, we report on the fabrication, characterization, and modeling of ferroelectric field-effect- transistors (FeFET). We demonstrate that polarization switching within ordinary 1T ferroelectric memory devices under specific conditions results in the measurement of subthreshold slopes < 2.3 kTq, near-zero hysteresis, negative drain induced barrier lowering (N-DIBL), and negative differential resistance (NDR) (Fig. 1). The polarization switching origin is identified by a strong dependence on the magnitude of the gate voltage, where below the critical gate voltage required to switch polarization, SS < 2.3 kTq, near-zero hysteresis, and negative DIBL cannot be observed. Further, we identify the source of NDR in the output characteristics to result from polarization switching near the drain of the FeFET at 10w VGS and high VDS. The NDR can be reproduced by a simple analytical model where two VT are present within the FeFET channel due to a non-uniform distribution of the polarization charge along the channel length. The intent of this work is to disambiguate and draw distinction between the effects of polarization switching in FeFET memory devices from that of negative capacitance as shown in Kwon et. al. [1], where a physically thicker oxide shows all the electric nronerties of a nhvsicallv thinner dielectric.

Original languageEnglish (US)
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538630280
StatePublished - Aug 20 2018
Event76th Device Research Conference, DRC 2018 - Santa Barbara, United States
Duration: Jun 24 2018Jun 27 2018

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other76th Device Research Conference, DRC 2018
Country/TerritoryUnited States
CitySanta Barbara

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


Dive into the research topics of 'Insinhts on the DC characterization of ferroelectric field-effect-transistors'. Together they form a unique fingerprint.

Cite this