TY - GEN
T1 - Insinhts on the DC characterization of ferroelectric field-effect-transistors
AU - Jerry, Matthew
AU - Smith, Jeffrey A.
AU - Ni, Kai
AU - Saha, Atanu
AU - Gupta, Sumeet
AU - Datta, Suman
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/8/20
Y1 - 2018/8/20
N2 - In this work, we report on the fabrication, characterization, and modeling of ferroelectric field-effect- transistors (FeFET). We demonstrate that polarization switching within ordinary 1T ferroelectric memory devices under specific conditions results in the measurement of subthreshold slopes < 2.3 kTq, near-zero hysteresis, negative drain induced barrier lowering (N-DIBL), and negative differential resistance (NDR) (Fig. 1). The polarization switching origin is identified by a strong dependence on the magnitude of the gate voltage, where below the critical gate voltage required to switch polarization, SS < 2.3 kTq, near-zero hysteresis, and negative DIBL cannot be observed. Further, we identify the source of NDR in the output characteristics to result from polarization switching near the drain of the FeFET at 10w VGS and high VDS. The NDR can be reproduced by a simple analytical model where two VT are present within the FeFET channel due to a non-uniform distribution of the polarization charge along the channel length. The intent of this work is to disambiguate and draw distinction between the effects of polarization switching in FeFET memory devices from that of negative capacitance as shown in Kwon et. al. [1], where a physically thicker oxide shows all the electric nronerties of a nhvsicallv thinner dielectric.
AB - In this work, we report on the fabrication, characterization, and modeling of ferroelectric field-effect- transistors (FeFET). We demonstrate that polarization switching within ordinary 1T ferroelectric memory devices under specific conditions results in the measurement of subthreshold slopes < 2.3 kTq, near-zero hysteresis, negative drain induced barrier lowering (N-DIBL), and negative differential resistance (NDR) (Fig. 1). The polarization switching origin is identified by a strong dependence on the magnitude of the gate voltage, where below the critical gate voltage required to switch polarization, SS < 2.3 kTq, near-zero hysteresis, and negative DIBL cannot be observed. Further, we identify the source of NDR in the output characteristics to result from polarization switching near the drain of the FeFET at 10w VGS and high VDS. The NDR can be reproduced by a simple analytical model where two VT are present within the FeFET channel due to a non-uniform distribution of the polarization charge along the channel length. The intent of this work is to disambiguate and draw distinction between the effects of polarization switching in FeFET memory devices from that of negative capacitance as shown in Kwon et. al. [1], where a physically thicker oxide shows all the electric nronerties of a nhvsicallv thinner dielectric.
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U2 - 10.1109/DRC.2018.8442191
DO - 10.1109/DRC.2018.8442191
M3 - Conference contribution
AN - SCOPUS:85053202726
SN - 9781538630280
T3 - Device Research Conference - Conference Digest, DRC
BT - 2018 76th Device Research Conference, DRC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 76th Device Research Conference, DRC 2018
Y2 - 24 June 2018 through 27 June 2018
ER -