Integrated a-Si:H/pentacene inorganic/organic complementary circuits

Mathias Bonse; Daniel B. Thomasson; Hagen Klauk; David J. Gundlach; Thomas Nelson Jackson

Integrated a-Si:H/pentacene inorganic/organic complementary circuits

Mathias Bonse, Daniel B. Thomasson, Hagen Klauk, David J. Gundlach, Thomas Nelson Jackson

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have developed a low-cost fabrication process for complementary circuits using integrated organic and inorganic thin film transistors (TFTs). In these circuits, a-Si:H TFTs are used as the n-channel and pentacene organic TFTs as the p-channel devices. These circuits show high switching gain and excellent logic level conservation, with very low off-currents during static operation. Gate delay of our circuits, measured using ring oscillators, is as low as 5 μs, the fastest speed reported for circuits using organic transistors.

Original language	English (US)
Pages (from-to)	249-252
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - Dec 1 1998
Event	Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: Dec 6 1998 → Dec 9 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "Integrated a-Si:H/pentacene inorganic/organic complementary circuits",

abstract = "We have developed a low-cost fabrication process for complementary circuits using integrated organic and inorganic thin film transistors (TFTs). In these circuits, a-Si:H TFTs are used as the n-channel and pentacene organic TFTs as the p-channel devices. These circuits show high switching gain and excellent logic level conservation, with very low off-currents during static operation. Gate delay of our circuits, measured using ring oscillators, is as low as 5 μs, the fastest speed reported for circuits using organic transistors.",

author = "Mathias Bonse and Thomasson, {Daniel B.} and Hagen Klauk and Gundlach, {David J.} and Jackson, {Thomas Nelson}",

year = "1998",

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pages = "249--252",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1998 IEEE International Electron Devices Meeting ; Conference date: 06-12-1998 Through 09-12-1998",

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T1 - Integrated a-Si:H/pentacene inorganic/organic complementary circuits

AU - Bonse, Mathias

AU - Thomasson, Daniel B.

AU - Klauk, Hagen

AU - Gundlach, David J.

AU - Jackson, Thomas Nelson

PY - 1998/12/1

Y1 - 1998/12/1

N2 - We have developed a low-cost fabrication process for complementary circuits using integrated organic and inorganic thin film transistors (TFTs). In these circuits, a-Si:H TFTs are used as the n-channel and pentacene organic TFTs as the p-channel devices. These circuits show high switching gain and excellent logic level conservation, with very low off-currents during static operation. Gate delay of our circuits, measured using ring oscillators, is as low as 5 μs, the fastest speed reported for circuits using organic transistors.

AB - We have developed a low-cost fabrication process for complementary circuits using integrated organic and inorganic thin film transistors (TFTs). In these circuits, a-Si:H TFTs are used as the n-channel and pentacene organic TFTs as the p-channel devices. These circuits show high switching gain and excellent logic level conservation, with very low off-currents during static operation. Gate delay of our circuits, measured using ring oscillators, is as low as 5 μs, the fastest speed reported for circuits using organic transistors.

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UR - http://www.scopus.com/inward/citedby.url?scp=0032257708&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032257708

SN - 0163-1918

SP - 249

EP - 252

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1998 IEEE International Electron Devices Meeting

Y2 - 6 December 1998 through 9 December 1998

ER -

Integrated a-Si:H/pentacene inorganic/organic complementary circuits

Abstract

All Science Journal Classification (ASJC) codes

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