Abstract
This work proposes a novel integrated circuit-on-glass (ICoG) platform for the 3D-heterogeneous integration (3DHI) of highly scaled gallium nitride (GaN) dielets for fabrication of millimeter-wave (mmWave) circuits. Au-free GaN-on-Si high electron mobility transistor (HEMT) dielets are fabricated using a copper gate technology and singulated to a size of 350 x 540 µm. The GaN dielets are embedded into a glass interposer featuring a two-layer redistribution layer (RDL) and copper back-end-of-line (BEOL) fabricated using semi-additive (SAP) processing. After quantifying the RDL loading effects on the GaN, a model of the dielet after integration is developed. This model was then used for the design and fabrication of two amplifiers, one targeting the fifth-generation (5G) new radio (NR) frequency range 2 (FR2) 28 GHz band and a 10 GHz amplifier featuring high linearity for future 5G NR frequency range 3 (FR3) applications.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 63-72 |
| Number of pages | 10 |
| Journal | IEEE Transactions on Microwave Theory and Techniques |
| Volume | 74 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2026 |
All Science Journal Classification (ASJC) codes
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering
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