TY - GEN
T1 - Integrated circuits based on two-dimensional materials
AU - Das, Saptarshi
AU - Sen, Dipanjan
AU - Ghosh, Subir
AU - Shaik, Rameez Raja
AU - Ravichandran, Harikrishnan
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - Two-dimensional (2D) materials have seen considerable advancements over the last decade, including improvements in growth techniques, device performance, and circuit integration. Additionally, a large number of field-effect transistors (FETs) have been integrated into analog, digital, mixed signal circuits for enabling applications such as neuromorphic and bio-inspired computing, near-sensor processing, and hardware security. More recently, monolithic and heterogenous three-dimensional (3D) integration of 2D FETs have gained significant attention. While these developments are promising, achieving p-type 2D FETs for complementary logic circuits remains a challenge. This paper reviews the progress in integrated circuits based on 2D materials and highlights future opportunities and challenges that need to be addressed for their adoption in commercial electronics.
AB - Two-dimensional (2D) materials have seen considerable advancements over the last decade, including improvements in growth techniques, device performance, and circuit integration. Additionally, a large number of field-effect transistors (FETs) have been integrated into analog, digital, mixed signal circuits for enabling applications such as neuromorphic and bio-inspired computing, near-sensor processing, and hardware security. More recently, monolithic and heterogenous three-dimensional (3D) integration of 2D FETs have gained significant attention. While these developments are promising, achieving p-type 2D FETs for complementary logic circuits remains a challenge. This paper reviews the progress in integrated circuits based on 2D materials and highlights future opportunities and challenges that need to be addressed for their adoption in commercial electronics.
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U2 - 10.1109/IEDM50854.2024.10873372
DO - 10.1109/IEDM50854.2024.10873372
M3 - Conference contribution
AN - SCOPUS:86000005753
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2024 IEEE International Electron Devices Meeting, IEDM 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2024 IEEE International Electron Devices Meeting, IEDM 2024
Y2 - 7 December 2024 through 11 December 2024
ER -