TY - GEN
T1 - Integrated temperature mapping of lateral gallium nitride electronics
AU - Lundh, J. S.
AU - Chatterjee, B.
AU - Dallas, J.
AU - Kim, H.
AU - Choi, S.
N1 - Publisher Copyright:
© 2017 IEEE.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/7/25
Y1 - 2017/7/25
N2 - For the first time, an integrated thermal characterization scheme that generates a full two-dimensional temperature map of GaN lateral devices has been developed. Through calibration and integration of micro-Raman thermometry, thermoreflectance thermal imaging, and infrared thermography, the accuracy of these techniques has been demonstrated to significantly improve, in addition to the complete thermal mapping capability. These techniques were utilized due to complementary attributes such as diverse material selectivity, probing depth, and spatial resolution. A coupled electro-thermal model was established to supplement experimental results and provide valuable insight into the electro-thermal phenomena governing device operation.
AB - For the first time, an integrated thermal characterization scheme that generates a full two-dimensional temperature map of GaN lateral devices has been developed. Through calibration and integration of micro-Raman thermometry, thermoreflectance thermal imaging, and infrared thermography, the accuracy of these techniques has been demonstrated to significantly improve, in addition to the complete thermal mapping capability. These techniques were utilized due to complementary attributes such as diverse material selectivity, probing depth, and spatial resolution. A coupled electro-thermal model was established to supplement experimental results and provide valuable insight into the electro-thermal phenomena governing device operation.
UR - http://www.scopus.com/inward/record.url?scp=85034419498&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85034419498&partnerID=8YFLogxK
U2 - 10.1109/ITHERM.2017.7992488
DO - 10.1109/ITHERM.2017.7992488
M3 - Conference contribution
AN - SCOPUS:85034419498
T3 - Proceedings of the 16th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017
SP - 320
EP - 327
BT - Proceedings of the 16th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 16th IEEE InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2017
Y2 - 30 May 2017 through 2 June 2017
ER -