Integration of gigahertz-bandwidth semiconductor devices inside microstructured optical fibres

Rongrui He; Pier J.A. Sazio; Anna C. Peacock; Noel Healy; Justin R. Sparks; Mahesh Krishnamurthi; Venkatraman Gopalan; John V. Badding

doi:10.1038/nphoton.2011.352

Integration of gigahertz-bandwidth semiconductor devices inside microstructured optical fibres

Rongrui He, Pier J.A. Sazio, Anna C. Peacock, Noel Healy, Justin R. Sparks, Mahesh Krishnamurthi, Venkatraman Gopalan, John V. Badding

Research output: Contribution to journal › Article › peer-review

117 Scopus citations

Abstract

The prospect of an all-fibre optical communications network in which light can be generated, modulated and detected within the fibre itself^1-11 without the need for discrete optoelectronic devices is an appealing one. However, to become a reality, this approach requires the incorporation of optoelectronic materials and functionalities into silica fibres to create a new breed of semiconductor-fibre hybrid devices for performing various tasks. Here, we report the integration of precisely doped semiconductor materials and high-quality rectifying semiconductor junctions into microstructured optical fibres, enabling high-speed, in-fibre functionalities such as photodetection at telecommunications wavelengths. These semiconductor-fibre hybrid devices exhibit a bandwidth of up to 3 GHz and seamless coupling to standard single-mode optical fibres.

Original language	English (US)
Pages (from-to)	174-179
Number of pages	6
Journal	Nature Photonics
Volume	6
Issue number	3
DOIs	https://doi.org/10.1038/nphoton.2011.352
State	Published - Mar 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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10.1038/nphoton.2011.352

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title = "Integration of gigahertz-bandwidth semiconductor devices inside microstructured optical fibres",

abstract = "The prospect of an all-fibre optical communications network in which light can be generated, modulated and detected within the fibre itself1-11 without the need for discrete optoelectronic devices is an appealing one. However, to become a reality, this approach requires the incorporation of optoelectronic materials and functionalities into silica fibres to create a new breed of semiconductor-fibre hybrid devices for performing various tasks. Here, we report the integration of precisely doped semiconductor materials and high-quality rectifying semiconductor junctions into microstructured optical fibres, enabling high-speed, in-fibre functionalities such as photodetection at telecommunications wavelengths. These semiconductor-fibre hybrid devices exhibit a bandwidth of up to 3 GHz and seamless coupling to standard single-mode optical fibres.",

author = "Rongrui He and Sazio, {Pier J.A.} and Peacock, {Anna C.} and Noel Healy and Sparks, {Justin R.} and Mahesh Krishnamurthi and Venkatraman Gopalan and Badding, {John V.}",

note = "Funding Information: The authors thank N. F. Baril, J. A. Calkins, D. W. Keefer, P. Horak and Y. Zeng for helpful discussions and technical assistance. This work was supported by the Pennsylvania State University Materials Research Institute Nano Fabrication Network and the National Science Foundation (NSF) (Cooperative Agreement no. 0335765), National Nanotechnology Infrastructure Network, with Cornell University. The authors thank the EPSRC (EP/G028273/1), NSF (DMR-0806860, DMR-1107894) and Penn State Materials Research Science and Engineering Center (NSF DMR-0820404) for financial support. A. C. Peacock is a holder of a Royal Academy of Engineering fellowship.",

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AU - Sazio, Pier J.A.

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AU - Sparks, Justin R.

AU - Krishnamurthi, Mahesh

AU - Gopalan, Venkatraman

AU - Badding, John V.

N1 - Funding Information: The authors thank N. F. Baril, J. A. Calkins, D. W. Keefer, P. Horak and Y. Zeng for helpful discussions and technical assistance. This work was supported by the Pennsylvania State University Materials Research Institute Nano Fabrication Network and the National Science Foundation (NSF) (Cooperative Agreement no. 0335765), National Nanotechnology Infrastructure Network, with Cornell University. The authors thank the EPSRC (EP/G028273/1), NSF (DMR-0806860, DMR-1107894) and Penn State Materials Research Science and Engineering Center (NSF DMR-0820404) for financial support. A. C. Peacock is a holder of a Royal Academy of Engineering fellowship.

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AB - The prospect of an all-fibre optical communications network in which light can be generated, modulated and detected within the fibre itself1-11 without the need for discrete optoelectronic devices is an appealing one. However, to become a reality, this approach requires the incorporation of optoelectronic materials and functionalities into silica fibres to create a new breed of semiconductor-fibre hybrid devices for performing various tasks. Here, we report the integration of precisely doped semiconductor materials and high-quality rectifying semiconductor junctions into microstructured optical fibres, enabling high-speed, in-fibre functionalities such as photodetection at telecommunications wavelengths. These semiconductor-fibre hybrid devices exhibit a bandwidth of up to 3 GHz and seamless coupling to standard single-mode optical fibres.

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Integration of gigahertz-bandwidth semiconductor devices inside microstructured optical fibres

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