Abstract
The effect of a weak magnetic field on the intensity of photoluminescence (PL) due to exciton recombination in silicon is investigated. A considerable decrease (as much as 1040 % for a rather low optical excitation level, <1 W/cm2) in the PL intensity with above-band-gap excitation is observed with increasing magnetic field (<0.25 T). The magnitude of this change depends on optical pumping level, excitation photon energy, orientation of the crystal with respect to the magnetic field, as well as the near-surface quality of the crystal. The mechanism responsible for this phenomenon is discussed and is attributed mainly to a strong enhancement of surface recombination due to magnetic-field-induced confinement of photoexcited free carriers near the surface.
Original language | English (US) |
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Pages (from-to) | 5120-5125 |
Number of pages | 6 |
Journal | Physical Review B |
Volume | 42 |
Issue number | 8 |
DOIs | |
State | Published - 1990 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics