@inproceedings{27f5e638b0874fa59c40c5dfd0b69aa6,
title = "Inter-Laboratory Comparison of Gate Resistance Thermometry Measurements of RF GaN HEMTs",
abstract = "This paper reports an inter-laboratory comparison of the thermal characterization of GaN HEMTs using the gate resistance thermometry (GRT) technique. GRT test benches at three different universities in the United States are utilized to conduct GRT calibration and biased transistor measurements using best practices at each respective laboratory. The results in this work demonstrate excellent precision of GRT calibration and measurements {\textendash} a critical assessment for ensuring accurate electrothermal modeling of GaN HEMTs. This work could be useful for GaN HEMT characterization and modeling engineers for determining the level of precision in GRT measurements and understanding discrepancies between GRT measurements collected at different laboratories.",
author = "Dashiel Matlock and Emils Jurcik and Shoemaker, \{Daniel C.\} and Seokjun Kim and Dave Frey and Edward Gebara and Maher Tahhan and Matt DeJarld and Chumbes, \{Eduardo M.\} and Jeffrey Laroche and Samuel Graham and Sukwon Choi and Miller, \{Nicholas C.\}",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2025 ; Conference date: 12-10-2025 Through 15-10-2025",
year = "2025",
doi = "10.1109/BCICTS63111.2025.11211228",
language = "English (US)",
series = "2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2025",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2025",
address = "United States",
}