Interaction of atomic hydrogen with ion bombardment induced defects at Si/SiO2 interfaces

S. Kar; S. Ashok

Interaction of atomic hydrogen with ion bombardment induced defects at Si/SiO₂ interfaces

S. Kar, S. Ashok

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Electrically active traps were induced in the Si-SiO₂ interfacial region by silicon ion bombardment. A Kaufman source was used to introduce 400 eV hydrogen ions into the oxide and the interface. The interaction of the hydrogen species with the traps was monitored by a comprehensive set of electrical measurements of the metal-oxide-silicon [MOS] structures.

Original language	English (US)
Title of host publication	Materials Research Society Symposium Proceedings
Editors	Jerzy Kanicki, William L. Warren, Roderick A.B. Devine, Masakiyo Matsumura
Publisher	Publ by Materials Research Society
Pages	281-286
Number of pages	6
ISBN (Print)	1558991794
State	Published - 1993
Event	Proceedings of a Symposium on Amorphous Insulating Thin Films - Boston, MA, USA Duration: Dec 1 1992 → Dec 4 1992

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	284
ISSN (Print)	0272-9172

Other

Other	Proceedings of a Symposium on Amorphous Insulating Thin Films
City	Boston, MA, USA
Period	12/1/92 → 12/4/92

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@inproceedings{bafa4486118c458fb8dbcf53a7bc83f7,

title = "Interaction of atomic hydrogen with ion bombardment induced defects at Si/SiO2 interfaces",

abstract = "Electrically active traps were induced in the Si-SiO2 interfacial region by silicon ion bombardment. A Kaufman source was used to introduce 400 eV hydrogen ions into the oxide and the interface. The interaction of the hydrogen species with the traps was monitored by a comprehensive set of electrical measurements of the metal-oxide-silicon [MOS] structures.",

author = "S. Kar and S. Ashok",

year = "1993",

language = "English (US)",

isbn = "1558991794",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "281--286",

editor = "Jerzy Kanicki and Warren, {William L.} and Devine, {Roderick A.B.} and Masakiyo Matsumura",

booktitle = "Materials Research Society Symposium Proceedings",

note = "Proceedings of a Symposium on Amorphous Insulating Thin Films ; Conference date: 01-12-1992 Through 04-12-1992",

}

Kar, S & Ashok, S 1993, Interaction of atomic hydrogen with ion bombardment induced defects at Si/SiO₂ interfaces. in J Kanicki, WL Warren, RAB Devine & M Matsumura (eds), Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 284, Publ by Materials Research Society, pp. 281-286, Proceedings of a Symposium on Amorphous Insulating Thin Films, Boston, MA, USA, 12/1/92.

Interaction of atomic hydrogen with ion bombardment induced defects at Si/SiO₂ interfaces. / Kar, S.; Ashok, S.
Materials Research Society Symposium Proceedings. ed. / Jerzy Kanicki; William L. Warren; Roderick A.B. Devine; Masakiyo Matsumura. Publ by Materials Research Society, 1993. p. 281-286 (Materials Research Society Symposium Proceedings; Vol. 284).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Interaction of atomic hydrogen with ion bombardment induced defects at Si/SiO2 interfaces

AU - Kar, S.

AU - Ashok, S.

PY - 1993

Y1 - 1993

N2 - Electrically active traps were induced in the Si-SiO2 interfacial region by silicon ion bombardment. A Kaufman source was used to introduce 400 eV hydrogen ions into the oxide and the interface. The interaction of the hydrogen species with the traps was monitored by a comprehensive set of electrical measurements of the metal-oxide-silicon [MOS] structures.

AB - Electrically active traps were induced in the Si-SiO2 interfacial region by silicon ion bombardment. A Kaufman source was used to introduce 400 eV hydrogen ions into the oxide and the interface. The interaction of the hydrogen species with the traps was monitored by a comprehensive set of electrical measurements of the metal-oxide-silicon [MOS] structures.

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M3 - Conference contribution

AN - SCOPUS:0027831287

SN - 1558991794

T3 - Materials Research Society Symposium Proceedings

SP - 281

EP - 286

BT - Materials Research Society Symposium Proceedings

A2 - Kanicki, Jerzy

A2 - Warren, William L.

A2 - Devine, Roderick A.B.

A2 - Matsumura, Masakiyo

PB - Publ by Materials Research Society

T2 - Proceedings of a Symposium on Amorphous Insulating Thin Films

Y2 - 1 December 1992 through 4 December 1992

ER -