Interaction of molecular hydrogen with trapped hole E' centers in irradiated and high field stressed metal/oxide/silicon oxides

We explore the effect of forming gas anneals at 110 °C on E' centers in metal/oxide/semiconductor oxides subjected to gamma, electron, and vacuum ultraviolet irradiation, as well as high electric field stressing. We find that this brief low-temperature anneal substantially reduces E' density in all cases, clearly demonstrating that hydrogen reacts readily with the E' sites. Although this work confirms a recent report of the reactivity of E' and hydrogen we fail to detect the reported reaction product known as the 74-G doublet.