TY - GEN
T1 - Interactions of sapphire surfaces with standard cleaning solutions
AU - Kirby, K.
AU - Shanmugasundaram, K.
AU - Bojan, V.
AU - Ruzyllo, J.
PY - 2007
Y1 - 2007
N2 - In this study, the effects of selected standard surface cleaning processes on sapphire surfaces were investigated. Wet chemistries commonly used in Si cleaning including HPM, APM and dilute HF were studied along with alumina etching H3PO4. The cleaned substrates were characterized by means of wetting angle measurements, AFM, and XPS analyses. The preliminary results presented in this report indicate that all chemistries studied were altering morphology of sapphire surface. The HPM and APM mixtures were found to smoothen the surface while the effect of acidic etchants, HF and H 3PO4 was adverse and beneficial respectively. The XPS analysis indicated that within the range of elements monitored none of the above chemistries altered chemical composition of the sapphire surface in a meaningful manner.
AB - In this study, the effects of selected standard surface cleaning processes on sapphire surfaces were investigated. Wet chemistries commonly used in Si cleaning including HPM, APM and dilute HF were studied along with alumina etching H3PO4. The cleaned substrates were characterized by means of wetting angle measurements, AFM, and XPS analyses. The preliminary results presented in this report indicate that all chemistries studied were altering morphology of sapphire surface. The HPM and APM mixtures were found to smoothen the surface while the effect of acidic etchants, HF and H 3PO4 was adverse and beneficial respectively. The XPS analysis indicated that within the range of elements monitored none of the above chemistries altered chemical composition of the sapphire surface in a meaningful manner.
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U2 - 10.1149/1.2779397
DO - 10.1149/1.2779397
M3 - Conference contribution
AN - SCOPUS:45249109505
SN - 9781566775687
T3 - ECS Transactions
SP - 343
EP - 349
BT - ECS Transactions - 10th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing
PB - Electrochemical Society Inc.
T2 - 10th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing - 212th ECS Meeting
Y2 - 7 October 2007 through 12 October 2007
ER -