TY - JOUR
T1 - Interdependence of Electronic and Thermal Transport in AlxGa1-xN Channel HEMTs
AU - Chatterjee, Bikramjit
AU - Armstrong, Andrew M.
AU - Klein, Brianna A.
AU - Bansal, Anushka
AU - Seyf, Hamid R.
AU - Talreja, Disha
AU - Pogrebnyakov, Alexej
AU - Heller, Eric
AU - Gopalan, Venkatraman
AU - Henry, Asegun S.
AU - Redwing, Joan M.
AU - Lundh, James Spencer
AU - Foley, Brian
AU - Choi, Sukwon
AU - Song, Yiwen
AU - Shoemaker, Daniel
AU - Baca, Albert G.
AU - Kaplar, Robert J.
AU - Beechem, Thomas E.
AU - Saltonstall, Christopher
AU - Allerman, Andrew A.
N1 - Publisher Copyright:
© 1980-2012 IEEE.
PY - 2020/3
Y1 - 2020/3
N2 - Aluminum gallium nitride (AlGaN) high electron mobility transistors (HEMTs) are candidates for next-generation power conversion and radio frequency (RF) applications. AlxGa1-xN channel HEMT devices (x = 0.3, x = 0.7) were investigated using multiple in-situ thermal characterization methods and electro-thermal simulation. The thermal conductivity, contact resistivity, and channel mobility were characterized as a function of temperature to understand and compare the heat generation profile and electro-thermal transport within these devices. In contrast to GaN-based HEMTs, the electrical output characteristics of Al0.70Ga0.30 N channel HEMTs exhibit remarkably lower sensitivity to the ambient temperature rise. Also, during 10kHz pulsed operation, the difference in peak temperature between the AlGaN channel HEMTs and GaN HEMTs reduced significantly.
AB - Aluminum gallium nitride (AlGaN) high electron mobility transistors (HEMTs) are candidates for next-generation power conversion and radio frequency (RF) applications. AlxGa1-xN channel HEMT devices (x = 0.3, x = 0.7) were investigated using multiple in-situ thermal characterization methods and electro-thermal simulation. The thermal conductivity, contact resistivity, and channel mobility were characterized as a function of temperature to understand and compare the heat generation profile and electro-thermal transport within these devices. In contrast to GaN-based HEMTs, the electrical output characteristics of Al0.70Ga0.30 N channel HEMTs exhibit remarkably lower sensitivity to the ambient temperature rise. Also, during 10kHz pulsed operation, the difference in peak temperature between the AlGaN channel HEMTs and GaN HEMTs reduced significantly.
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U2 - 10.1109/LED.2020.2969515
DO - 10.1109/LED.2020.2969515
M3 - Article
AN - SCOPUS:85080893549
SN - 0741-3106
VL - 41
SP - 461
EP - 464
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 3
M1 - 8970272
ER -