Interdependence of Electronic and Thermal Transport in AlxGa1-xN Channel HEMTs

Bikramjit Chatterjee; Andrew M. Armstrong; Brianna A. Klein; Anushka Bansal; Hamid R. Seyf; Disha Talreja; Alexej Pogrebnyakov; Eric Heller; Venkatraman Gopalan; Asegun S. Henry; Joan M. Redwing; James Spencer Lundh; Brian Foley; Sukwon Choi; Yiwen Song; Daniel Shoemaker; Albert G. Baca; Robert J. Kaplar; Thomas E. Beechem; Christopher Saltonstall; Andrew A. Allerman

doi:10.1109/LED.2020.2969515

Interdependence of Electronic and Thermal Transport in Al_xGa_1-xN Channel HEMTs

Bikramjit Chatterjee
, Andrew M. Armstrong
, Brianna A. Klein
, Anushka Bansal
, Hamid R. Seyf
, Disha Talreja
, Alexej Pogrebnyakov
, Eric Heller
, Venkatraman Gopalan
, Asegun S. Henry
, Joan M. Redwing
, James Spencer Lundh
, Brian Foley
, Sukwon Choi
, Yiwen Song
, Daniel Shoemaker
, Albert G. Baca
, Robert J. Kaplar
, Thomas E. Beechem
, Christopher Saltonstall

Andrew A. Allerman

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Aluminum gallium nitride (AlGaN) high electron mobility transistors (HEMTs) are candidates for next-generation power conversion and radio frequency (RF) applications. Al_xGa_1-xN channel HEMT devices (x = 0.3, x = 0.7) were investigated using multiple in-situ thermal characterization methods and electro-thermal simulation. The thermal conductivity, contact resistivity, and channel mobility were characterized as a function of temperature to understand and compare the heat generation profile and electro-thermal transport within these devices. In contrast to GaN-based HEMTs, the electrical output characteristics of Al_0.70Ga_0.30 N channel HEMTs exhibit remarkably lower sensitivity to the ambient temperature rise. Also, during 10kHz pulsed operation, the difference in peak temperature between the AlGaN channel HEMTs and GaN HEMTs reduced significantly.

Original language	English (US)
Article number	8970272
Pages (from-to)	461-464
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	3
DOIs	https://doi.org/10.1109/LED.2020.2969515
State	Published - Mar 2020

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2020.2969515

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Chatterjee, B., Armstrong, A. M., Klein, B. A., Bansal, A., Seyf, H. R., Talreja, D., Pogrebnyakov, A., Heller, E., Gopalan, V., Henry, A. S., Redwing, J. M., Lundh, J. S., Foley, B., Choi, S., Song, Y., Shoemaker, D., Baca, A. G., Kaplar, R. J., Beechem, T. E., ... Allerman, A. A. (2020). Interdependence of Electronic and Thermal Transport in Al_xGa_1-xN Channel HEMTs. IEEE Electron Device Letters, 41(3), 461-464. Article 8970272. https://doi.org/10.1109/LED.2020.2969515

@article{af0127eba53d48eb8c8f7aa33b520060,

title = "Interdependence of Electronic and Thermal Transport in AlxGa1-xN Channel HEMTs",

abstract = "Aluminum gallium nitride (AlGaN) high electron mobility transistors (HEMTs) are candidates for next-generation power conversion and radio frequency (RF) applications. AlxGa1-xN channel HEMT devices (x = 0.3, x = 0.7) were investigated using multiple in-situ thermal characterization methods and electro-thermal simulation. The thermal conductivity, contact resistivity, and channel mobility were characterized as a function of temperature to understand and compare the heat generation profile and electro-thermal transport within these devices. In contrast to GaN-based HEMTs, the electrical output characteristics of Al0.70Ga0.30 N channel HEMTs exhibit remarkably lower sensitivity to the ambient temperature rise. Also, during 10kHz pulsed operation, the difference in peak temperature between the AlGaN channel HEMTs and GaN HEMTs reduced significantly.",

author = "Bikramjit Chatterjee and Armstrong, \{Andrew M.\} and Klein, \{Brianna A.\} and Anushka Bansal and Seyf, \{Hamid R.\} and Disha Talreja and Alexej Pogrebnyakov and Eric Heller and Venkatraman Gopalan and Henry, \{Asegun S.\} and Redwing, \{Joan M.\} and Lundh, \{James Spencer\} and Brian Foley and Sukwon Choi and Yiwen Song and Daniel Shoemaker and Baca, \{Albert G.\} and Kaplar, \{Robert J.\} and Beechem, \{Thomas E.\} and Christopher Saltonstall and Allerman, \{Andrew A.\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2020",

month = mar,

doi = "10.1109/LED.2020.2969515",

language = "English (US)",

volume = "41",

pages = "461--464",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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}

Chatterjee, B, Armstrong, AM, Klein, BA, Bansal, A, Seyf, HR, Talreja, D, Pogrebnyakov, A, Heller, E, Gopalan, V, Henry, AS, Redwing, JM, Lundh, JS, Foley, B, Choi, S, Song, Y, Shoemaker, D, Baca, AG, Kaplar, RJ, Beechem, TE, Saltonstall, C & Allerman, AA 2020, 'Interdependence of Electronic and Thermal Transport in Al_xGa_1-xN Channel HEMTs', IEEE Electron Device Letters, vol. 41, no. 3, 8970272, pp. 461-464. https://doi.org/10.1109/LED.2020.2969515

TY - JOUR

T1 - Interdependence of Electronic and Thermal Transport in AlxGa1-xN Channel HEMTs

AU - Chatterjee, Bikramjit

AU - Armstrong, Andrew M.

AU - Klein, Brianna A.

AU - Bansal, Anushka

AU - Seyf, Hamid R.

AU - Talreja, Disha

AU - Pogrebnyakov, Alexej

AU - Heller, Eric

AU - Gopalan, Venkatraman

AU - Henry, Asegun S.

AU - Redwing, Joan M.

AU - Lundh, James Spencer

AU - Foley, Brian

AU - Choi, Sukwon

AU - Song, Yiwen

AU - Shoemaker, Daniel

AU - Baca, Albert G.

AU - Kaplar, Robert J.

AU - Beechem, Thomas E.

AU - Saltonstall, Christopher

AU - Allerman, Andrew A.

PY - 2020/3

Y1 - 2020/3

N2 - Aluminum gallium nitride (AlGaN) high electron mobility transistors (HEMTs) are candidates for next-generation power conversion and radio frequency (RF) applications. AlxGa1-xN channel HEMT devices (x = 0.3, x = 0.7) were investigated using multiple in-situ thermal characterization methods and electro-thermal simulation. The thermal conductivity, contact resistivity, and channel mobility were characterized as a function of temperature to understand and compare the heat generation profile and electro-thermal transport within these devices. In contrast to GaN-based HEMTs, the electrical output characteristics of Al0.70Ga0.30 N channel HEMTs exhibit remarkably lower sensitivity to the ambient temperature rise. Also, during 10kHz pulsed operation, the difference in peak temperature between the AlGaN channel HEMTs and GaN HEMTs reduced significantly.

AB - Aluminum gallium nitride (AlGaN) high electron mobility transistors (HEMTs) are candidates for next-generation power conversion and radio frequency (RF) applications. AlxGa1-xN channel HEMT devices (x = 0.3, x = 0.7) were investigated using multiple in-situ thermal characterization methods and electro-thermal simulation. The thermal conductivity, contact resistivity, and channel mobility were characterized as a function of temperature to understand and compare the heat generation profile and electro-thermal transport within these devices. In contrast to GaN-based HEMTs, the electrical output characteristics of Al0.70Ga0.30 N channel HEMTs exhibit remarkably lower sensitivity to the ambient temperature rise. Also, during 10kHz pulsed operation, the difference in peak temperature between the AlGaN channel HEMTs and GaN HEMTs reduced significantly.

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VL - 41

SP - 461

EP - 464

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

M1 - 8970272

ER -

Interdependence of Electronic and Thermal Transport in Al_xGa_1-xN Channel HEMTs

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