TY - GEN
T1 - Interface defects and negative bias temperature instabilities in 4H-SiC PMOSFETs - A combined DCIV/SDR study
AU - Aichinger, Thomas
AU - Lenahan, Patrick M.
AU - Peters, Dethard
N1 - Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - We study the structure of SiC/SiO2 interface defects and the effects of negative bias temperature stress (NBTS) in lateral 4H silicon carbide (SiC) PMOSFETs. Our devices have 90 nm thick SiO2 gate oxides thermally grown in N2O ambient at 1280°C on n-type SiC. We investigate virgin (unstressed) and stressed devices using two different techniques: (i) for electrical characterization, we use the direct-current current-voltage (DCIV) technique [1] which measures a recombination current via interface defects and charge pumping (CP) which measures the number of interface defects within a certain range of the SiC band gap; (ii) to study the structure of the defects, we use electrically detected magnetic resonance (EDMR) via spin dependent recombination (SDR) [2]. The elevated temperature during NBTS is provided by in-situ heated test structures. This is the first EDMR study of p-doped SiC MOSFETs and the first negative bias temperature instability (NBTI) study of SiC MOSFETs using in-situ (on-chip) heating during stress.
AB - We study the structure of SiC/SiO2 interface defects and the effects of negative bias temperature stress (NBTS) in lateral 4H silicon carbide (SiC) PMOSFETs. Our devices have 90 nm thick SiO2 gate oxides thermally grown in N2O ambient at 1280°C on n-type SiC. We investigate virgin (unstressed) and stressed devices using two different techniques: (i) for electrical characterization, we use the direct-current current-voltage (DCIV) technique [1] which measures a recombination current via interface defects and charge pumping (CP) which measures the number of interface defects within a certain range of the SiC band gap; (ii) to study the structure of the defects, we use electrically detected magnetic resonance (EDMR) via spin dependent recombination (SDR) [2]. The elevated temperature during NBTS is provided by in-situ heated test structures. This is the first EDMR study of p-doped SiC MOSFETs and the first negative bias temperature instability (NBTI) study of SiC MOSFETs using in-situ (on-chip) heating during stress.
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U2 - 10.4028/www.scientific.net/MSF.740-742.529
DO - 10.4028/www.scientific.net/MSF.740-742.529
M3 - Conference contribution
AN - SCOPUS:84874054441
SN - 9783037856246
T3 - Materials Science Forum
SP - 529
EP - 532
BT - Silicon Carbide and Related Materials 2012, ECSCRM 2012
A2 - Lebedev, Alexander A.
A2 - Davydov, Sergey Yu.
A2 - Ivanov, Pavel A.
A2 - Levinshtein, Mikhail E.
PB - Trans Tech Publications Ltd
T2 - 9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
Y2 - 2 September 2012 through 6 September 2012
ER -