Interface defects in Si/HfO 2-based metal-oxide-semiconductor field-effect transistors

T. G. Pribicko; J. P. Campbell; P. M. Lenahan; W. Tsai; A. Kerber

doi:10.1063/1.1919397

Interface defects in Si/HfO ₂-based metal-oxide-semiconductor field-effect transistors

T. G. Pribicko, J. P. Campbell, P. M. Lenahan, W. Tsai, A. Kerber

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Using spin dependent recombination (SDR), we observe the generation of Pb -like center Si HfO2 interface trapping defects resulting from gate voltage stressing in fully processed metal gate transistors. We find that in situ gate voltage stressing increases the amplitude of the SDR response of the Si HfO2 interface Pb -like defect. A sequence of modest negative and positive voltages produces hysteretic behavior in the SDR response. This result suggests that the application of modest gate voltages changes the chemicalphysical nature of the defects involved.

Original language	English (US)
Article number	173511
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	17
DOIs	https://doi.org/10.1063/1.1919397
State	Published - Apr 25 2005

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1919397

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title = "Interface defects in Si/HfO 2-based metal-oxide-semiconductor field-effect transistors",

abstract = "Using spin dependent recombination (SDR), we observe the generation of Pb -like center Si HfO2 interface trapping defects resulting from gate voltage stressing in fully processed metal gate transistors. We find that in situ gate voltage stressing increases the amplitude of the SDR response of the Si HfO2 interface Pb -like defect. A sequence of modest negative and positive voltages produces hysteretic behavior in the SDR response. This result suggests that the application of modest gate voltages changes the chemicalphysical nature of the defects involved.",

author = "Pribicko, {T. G.} and Campbell, {J. P.} and Lenahan, {P. M.} and W. Tsai and A. Kerber",

note = "Funding Information: Work at Penn State was supported by the Intel Corporation through SRC custom funding. The authors would also like to acknowledge Lars Ragnarrson and Stefan DeGendt of IMEC, Leuven, Belgium for supplying the metal gated-high- k transistors for this work. ",

year = "2005",

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doi = "10.1063/1.1919397",

language = "English (US)",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Interface defects in Si/HfO 2-based metal-oxide-semiconductor field-effect transistors

AU - Pribicko, T. G.

AU - Campbell, J. P.

AU - Lenahan, P. M.

AU - Tsai, W.

AU - Kerber, A.

N1 - Funding Information: Work at Penn State was supported by the Intel Corporation through SRC custom funding. The authors would also like to acknowledge Lars Ragnarrson and Stefan DeGendt of IMEC, Leuven, Belgium for supplying the metal gated-high- k transistors for this work.

PY - 2005/4/25

Y1 - 2005/4/25

N2 - Using spin dependent recombination (SDR), we observe the generation of Pb -like center Si HfO2 interface trapping defects resulting from gate voltage stressing in fully processed metal gate transistors. We find that in situ gate voltage stressing increases the amplitude of the SDR response of the Si HfO2 interface Pb -like defect. A sequence of modest negative and positive voltages produces hysteretic behavior in the SDR response. This result suggests that the application of modest gate voltages changes the chemicalphysical nature of the defects involved.

AB - Using spin dependent recombination (SDR), we observe the generation of Pb -like center Si HfO2 interface trapping defects resulting from gate voltage stressing in fully processed metal gate transistors. We find that in situ gate voltage stressing increases the amplitude of the SDR response of the Si HfO2 interface Pb -like defect. A sequence of modest negative and positive voltages produces hysteretic behavior in the SDR response. This result suggests that the application of modest gate voltages changes the chemicalphysical nature of the defects involved.

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Interface defects in Si/HfO ₂-based metal-oxide-semiconductor field-effect transistors

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