Abstract
Interface kinetics processes of ATMB crystal have been investigated in real time by using phase-contrast differential interferometric micrography with an automatic image-analysis system. The movement of straight steps on {1 0 1 2} faces have been studied. Experiment demonstrates that the mechanism of ATMB crystal growth is a typical model of multiple two-dimensional nucleation. During the crystal growth, there exist a critical supersaturation σ*≅3-4%. When σ* < σ < σ** = 16.5%, crystals grow by the consecutive deposition of layers. If σ** < σ < 18.50%, crystals grow by quasi-normal growth mechanism. The conditions of rapid growth of large ATMB crystal with good quality are presented.
Original language | English (US) |
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Pages (from-to) | 428-433 |
Number of pages | 6 |
Journal | Journal of Crystal Growth |
Volume | 182 |
Issue number | 3-4 |
DOIs | |
State | Published - Dec 1997 |
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry