Interface preservation during Ge-rich source/drain contact formation

C. Niu; M. Raymond; V. Kamineni; J. Fronheiser; S. Siddiqui; H. Niimi; J. M. Dechene; A. Labonte; P. Adusumilli; A. V. Carr; J. Shearer; J. Demarest; L. Jiang; J. Li; R. W. Hengstebeck

doi:10.1109/ASMC.2016.7491158

Interface preservation during Ge-rich source/drain contact formation

C. Niu, M. Raymond, V. Kamineni, J. Fronheiser, S. Siddiqui, H. Niimi, J. M. Dechene, A. Labonte, P. Adusumilli, A. V. Carr, J. Shearer, J. Demarest, L. Jiang, J. Li, R. W. Hengstebeck

Materials Research Institute (MRI)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Contact engineering of Ge-rich source/drain is of critical importance for the development of advanced nano-scale CMOS technology nodes. Germanosilicide or Germanide contacts with low Schottky barrier height are highly desirable to achieve low contact resistance for a Ge-rich source/drain. However, practical integration of Ge-rich SiGe into devices is complicated by its unique physical and chemical properties as compared to Si-rich epitaxial SiGe. We have observed significant erosion along the SiGe interface with its dielectric cap layer. The N₂-H₂ remote plasma resist strip process has been shown to trigger this erosion when GeO₂ exists together with SiO₂ at the interface. The integrity of Ge-rich SiGe contact interface can be preserved by replacing the N₂-H₂ remote plasma resist strip with an O₂-based photoresist ash process. Cross-sectional STEM and EDX elemental analysis have confirmed Germanide and Germanosilicide formation at the Ge-rich SiGe contact interface.

Original language	English (US)
Title of host publication	2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	320-323
Number of pages	4
ISBN (Electronic)	9781509002702
DOIs	https://doi.org/10.1109/ASMC.2016.7491158
State	Published - Jun 13 2016
Event	27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016 - Saratoga Springs, United States Duration: May 16 2016 → May 19 2016

Publication series

Name	2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016

Conference

Conference	27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016
Country/Territory	United States
City	Saratoga Springs
Period	5/16/16 → 5/19/16

All Science Journal Classification (ASJC) codes

Industrial and Manufacturing Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ASMC.2016.7491158

Cite this

Niu, C., Raymond, M., Kamineni, V., Fronheiser, J., Siddiqui, S., Niimi, H., Dechene, J. M., Labonte, A., Adusumilli, P., Carr, A. V., Shearer, J., Demarest, J., Jiang, L., Li, J., & Hengstebeck, R. W. (2016). Interface preservation during Ge-rich source/drain contact formation. In 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016 (pp. 320-323). Article 7491158 (2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ASMC.2016.7491158

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title = "Interface preservation during Ge-rich source/drain contact formation",

abstract = "Contact engineering of Ge-rich source/drain is of critical importance for the development of advanced nano-scale CMOS technology nodes. Germanosilicide or Germanide contacts with low Schottky barrier height are highly desirable to achieve low contact resistance for a Ge-rich source/drain. However, practical integration of Ge-rich SiGe into devices is complicated by its unique physical and chemical properties as compared to Si-rich epitaxial SiGe. We have observed significant erosion along the SiGe interface with its dielectric cap layer. The N2-H2 remote plasma resist strip process has been shown to trigger this erosion when GeO2 exists together with SiO2 at the interface. The integrity of Ge-rich SiGe contact interface can be preserved by replacing the N2-H2 remote plasma resist strip with an O2-based photoresist ash process. Cross-sectional STEM and EDX elemental analysis have confirmed Germanide and Germanosilicide formation at the Ge-rich SiGe contact interface.",

author = "C. Niu and M. Raymond and V. Kamineni and J. Fronheiser and S. Siddiqui and H. Niimi and Dechene, {J. M.} and A. Labonte and P. Adusumilli and Carr, {A. V.} and J. Shearer and J. Demarest and L. Jiang and J. Li and Hengstebeck, {R. W.}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016 ; Conference date: 16-05-2016 Through 19-05-2016",

year = "2016",

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doi = "10.1109/ASMC.2016.7491158",

language = "English (US)",

series = "2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Niu, C, Raymond, M, Kamineni, V, Fronheiser, J, Siddiqui, S, Niimi, H, Dechene, JM, Labonte, A, Adusumilli, P, Carr, AV, Shearer, J, Demarest, J, Jiang, L, Li, J & Hengstebeck, RW 2016, Interface preservation during Ge-rich source/drain contact formation. in 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016., 7491158, 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016, Institute of Electrical and Electronics Engineers Inc., pp. 320-323, 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016, Saratoga Springs, United States, 5/16/16. https://doi.org/10.1109/ASMC.2016.7491158

Interface preservation during Ge-rich source/drain contact formation. / Niu, C.; Raymond, M.; Kamineni, V. et al.
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 320-323 7491158 (2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Interface preservation during Ge-rich source/drain contact formation

AU - Niu, C.

AU - Raymond, M.

AU - Kamineni, V.

AU - Fronheiser, J.

AU - Siddiqui, S.

AU - Niimi, H.

AU - Dechene, J. M.

AU - Labonte, A.

AU - Adusumilli, P.

AU - Carr, A. V.

AU - Shearer, J.

AU - Demarest, J.

AU - Jiang, L.

AU - Li, J.

AU - Hengstebeck, R. W.

PY - 2016/6/13

Y1 - 2016/6/13

N2 - Contact engineering of Ge-rich source/drain is of critical importance for the development of advanced nano-scale CMOS technology nodes. Germanosilicide or Germanide contacts with low Schottky barrier height are highly desirable to achieve low contact resistance for a Ge-rich source/drain. However, practical integration of Ge-rich SiGe into devices is complicated by its unique physical and chemical properties as compared to Si-rich epitaxial SiGe. We have observed significant erosion along the SiGe interface with its dielectric cap layer. The N2-H2 remote plasma resist strip process has been shown to trigger this erosion when GeO2 exists together with SiO2 at the interface. The integrity of Ge-rich SiGe contact interface can be preserved by replacing the N2-H2 remote plasma resist strip with an O2-based photoresist ash process. Cross-sectional STEM and EDX elemental analysis have confirmed Germanide and Germanosilicide formation at the Ge-rich SiGe contact interface.

AB - Contact engineering of Ge-rich source/drain is of critical importance for the development of advanced nano-scale CMOS technology nodes. Germanosilicide or Germanide contacts with low Schottky barrier height are highly desirable to achieve low contact resistance for a Ge-rich source/drain. However, practical integration of Ge-rich SiGe into devices is complicated by its unique physical and chemical properties as compared to Si-rich epitaxial SiGe. We have observed significant erosion along the SiGe interface with its dielectric cap layer. The N2-H2 remote plasma resist strip process has been shown to trigger this erosion when GeO2 exists together with SiO2 at the interface. The integrity of Ge-rich SiGe contact interface can be preserved by replacing the N2-H2 remote plasma resist strip with an O2-based photoresist ash process. Cross-sectional STEM and EDX elemental analysis have confirmed Germanide and Germanosilicide formation at the Ge-rich SiGe contact interface.

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DO - 10.1109/ASMC.2016.7491158

M3 - Conference contribution

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T3 - 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016

SP - 320

EP - 323

BT - 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

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Y2 - 16 May 2016 through 19 May 2016

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Niu C, Raymond M, Kamineni V, Fronheiser J, Siddiqui S, Niimi H et al. Interface preservation during Ge-rich source/drain contact formation. In 2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 320-323. 7491158. (2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016). doi: 10.1109/ASMC.2016.7491158

Interface preservation during Ge-rich source/drain contact formation

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