@inproceedings{436d2e4744e849129772a43362356842,
title = "Interface preservation during Ge-rich source/drain contact formation",
abstract = "Contact engineering of Ge-rich source/drain is of critical importance for the development of advanced nano-scale CMOS technology nodes. Germanosilicide or Germanide contacts with low Schottky barrier height are highly desirable to achieve low contact resistance for a Ge-rich source/drain. However, practical integration of Ge-rich SiGe into devices is complicated by its unique physical and chemical properties as compared to Si-rich epitaxial SiGe. We have observed significant erosion along the SiGe interface with its dielectric cap layer. The N2-H2 remote plasma resist strip process has been shown to trigger this erosion when GeO2 exists together with SiO2 at the interface. The integrity of Ge-rich SiGe contact interface can be preserved by replacing the N2-H2 remote plasma resist strip with an O2-based photoresist ash process. Cross-sectional STEM and EDX elemental analysis have confirmed Germanide and Germanosilicide formation at the Ge-rich SiGe contact interface.",
author = "C. Niu and M. Raymond and V. Kamineni and J. Fronheiser and S. Siddiqui and H. Niimi and Dechene, \{J. M.\} and A. Labonte and P. Adusumilli and Carr, \{A. V.\} and J. Shearer and J. Demarest and L. Jiang and J. Li and Hengstebeck, \{R. W.\}",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016 ; Conference date: 16-05-2016 Through 19-05-2016",
year = "2016",
month = jun,
day = "13",
doi = "10.1109/ASMC.2016.7491158",
language = "English (US)",
series = "2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "320--323",
booktitle = "2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2016",
address = "United States",
}