Interface structure and chemistry in ZnSe/Ga1-xMnxAs/ZnSe heterostructures

G. D. Lian; E. C. Dickey; S. H. Chun; K. C. Ku; N. Samarth

doi:10.1063/1.1577825

Interface structure and chemistry in ZnSe/Ga_1-xMn_xAs/ZnSe heterostructures

G. D. Lian
, E. C. Dickey
, S. H. Chun
, K. C. Ku
, N. Samarth

Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The chemical composition and surface structure of ZnSe/Ga_1-xMn_xAs/ZnSe heterostructures were discussed. A high density of stacking faults was observed in the ZnSe layer, whereas all the other layers grown epitaxially were found to be free of planar defects. The manganese valence was found as 2⁺ and the composition of the ferromagnetic layer was found to be Ga_0.93Mn_0.07As.

Original language	English (US)
Pages (from-to)	3656-3658
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	21
DOIs	https://doi.org/10.1063/1.1577825
State	Published - May 26 2003

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1577825

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abstract = "The chemical composition and surface structure of ZnSe/Ga1-xMnxAs/ZnSe heterostructures were discussed. A high density of stacking faults was observed in the ZnSe layer, whereas all the other layers grown epitaxially were found to be free of planar defects. The manganese valence was found as 2+ and the composition of the ferromagnetic layer was found to be Ga0.93Mn0.07As.",

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T1 - Interface structure and chemistry in ZnSe/Ga1-xMnxAs/ZnSe heterostructures

AU - Lian, G. D.

AU - Dickey, E. C.

AU - Chun, S. H.

AU - Ku, K. C.

AU - Samarth, N.

PY - 2003/5/26

Y1 - 2003/5/26

N2 - The chemical composition and surface structure of ZnSe/Ga1-xMnxAs/ZnSe heterostructures were discussed. A high density of stacking faults was observed in the ZnSe layer, whereas all the other layers grown epitaxially were found to be free of planar defects. The manganese valence was found as 2+ and the composition of the ferromagnetic layer was found to be Ga0.93Mn0.07As.

AB - The chemical composition and surface structure of ZnSe/Ga1-xMnxAs/ZnSe heterostructures were discussed. A high density of stacking faults was observed in the ZnSe layer, whereas all the other layers grown epitaxially were found to be free of planar defects. The manganese valence was found as 2+ and the composition of the ferromagnetic layer was found to be Ga0.93Mn0.07As.

UR - https://www.scopus.com/pages/publications/0037969737

UR - https://www.scopus.com/pages/publications/0037969737#tab=citedBy

U2 - 10.1063/1.1577825

DO - 10.1063/1.1577825

M3 - Article

AN - SCOPUS:0037969737

SN - 0003-6951

VL - 82

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EP - 3658

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Interface structure and chemistry in ZnSe/Ga_1-xMn_xAs/ZnSe heterostructures

Abstract

All Science Journal Classification (ASJC) codes

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