Interface structures in MgB 2 thin films on (0001) SiC

J. S. Wu; N. Jiang; B. Jiang; J. C.H. Spence; A. V. Pogrebnyakov; J. M. Redwing; X. X. Xi

doi:10.1063/1.1779338

Interface structures in MgB ₂ thin films on (0001) SiC

J. S. Wu, N. Jiang, B. Jiang, J. C.H. Spence, A. V. Pogrebnyakov, J. M. Redwing, X. X. Xi

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The study of the structure of the MgB ₂/SiC interface by using high-resolution electron microscopy was presented. The MgB ₂ thin films were deposited on (001) 4H-SiC substrates at 720°C by the hybrid physical-chemical vapor deposition technique. A minority of dislocations with Burgers vectors were also generated to relax the mismatch stress between film and substrate. Using energy loss spectra obtained from nanometer regions it was shown that the interface was not affected by oxygen. The orientation relationship between the deposited MgB ₂ thin film and the substrate was also determined.

Original language	English (US)
Pages (from-to)	1155-1157
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	7
DOIs	https://doi.org/10.1063/1.1779338
State	Published - Aug 16 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1779338

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title = "Interface structures in MgB 2 thin films on (0001) SiC",

abstract = "The study of the structure of the MgB 2/SiC interface by using high-resolution electron microscopy was presented. The MgB 2 thin films were deposited on (001) 4H-SiC substrates at 720°C by the hybrid physical-chemical vapor deposition technique. A minority of dislocations with Burgers vectors were also generated to relax the mismatch stress between film and substrate. Using energy loss spectra obtained from nanometer regions it was shown that the interface was not affected by oxygen. The orientation relationship between the deposited MgB 2 thin film and the substrate was also determined.",

author = "Wu, {J. S.} and N. Jiang and B. Jiang and Spence, {J. C.H.} and Pogrebnyakov, {A. V.} and Redwing, {J. M.} and Xi, {X. X.}",

note = "Funding Information: This work is supported by ARO Award No. DAAD190010500. The work at Penn State is partially supported by ONR under Grant Nos. N00014-00-1-0294 (X.X.X.) and N0014-01-1-0006 (J.M.R.) and by NSF under Grant Nos. DMR-0306746 (X.X.X. and J.M.R.) ",

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doi = "10.1063/1.1779338",

language = "English (US)",

volume = "85",

pages = "1155--1157",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Interface structures in MgB 2 thin films on (0001) SiC

AU - Wu, J. S.

AU - Jiang, N.

AU - Jiang, B.

AU - Spence, J. C.H.

AU - Pogrebnyakov, A. V.

AU - Redwing, J. M.

AU - Xi, X. X.

N1 - Funding Information: This work is supported by ARO Award No. DAAD190010500. The work at Penn State is partially supported by ONR under Grant Nos. N00014-00-1-0294 (X.X.X.) and N0014-01-1-0006 (J.M.R.) and by NSF under Grant Nos. DMR-0306746 (X.X.X. and J.M.R.)

PY - 2004/8/16

Y1 - 2004/8/16

N2 - The study of the structure of the MgB 2/SiC interface by using high-resolution electron microscopy was presented. The MgB 2 thin films were deposited on (001) 4H-SiC substrates at 720°C by the hybrid physical-chemical vapor deposition technique. A minority of dislocations with Burgers vectors were also generated to relax the mismatch stress between film and substrate. Using energy loss spectra obtained from nanometer regions it was shown that the interface was not affected by oxygen. The orientation relationship between the deposited MgB 2 thin film and the substrate was also determined.

AB - The study of the structure of the MgB 2/SiC interface by using high-resolution electron microscopy was presented. The MgB 2 thin films were deposited on (001) 4H-SiC substrates at 720°C by the hybrid physical-chemical vapor deposition technique. A minority of dislocations with Burgers vectors were also generated to relax the mismatch stress between film and substrate. Using energy loss spectra obtained from nanometer regions it was shown that the interface was not affected by oxygen. The orientation relationship between the deposited MgB 2 thin film and the substrate was also determined.

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DO - 10.1063/1.1779338

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EP - 1157

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

ER -

Interface structures in MgB ₂ thin films on (0001) SiC

Abstract

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