TY - JOUR
T1 - Interfacial Ion Intermixing Effect on Four-Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions
AU - Huang, Weichuan
AU - Lin, Yue
AU - Yin, Yuewei
AU - Feng, Lei
AU - Zhang, Dalong
AU - Zhao, Wenbo
AU - Li, Qi
AU - Li, Xiaoguang
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/4/27
Y1 - 2016/4/27
N2 - A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents at least four resistance states in a single memory cell and therefore opens an avenue for the development of the next generation of high-density nonvolatile memory devices. Here, using the all-perovskite-oxide La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 as a model MFTJ system, we demonstrate asymmetrical Mn - Ti sublattice intermixing at the La0.7Sr0.3MnO3/BaTiO3 interfaces by direct local measurements of the structure and valence, which reveals the relationship between ferroelectric polarization directions and four-resistance states, and the low temperature anomalous tunneling behavior in the MFTJ. These findings emphasize the crucial role of the interfaces in MFTJs and are quite important for understanding the electric transport of MFTJs as well as designing high-density multistates storage devices.
AB - A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents at least four resistance states in a single memory cell and therefore opens an avenue for the development of the next generation of high-density nonvolatile memory devices. Here, using the all-perovskite-oxide La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 as a model MFTJ system, we demonstrate asymmetrical Mn - Ti sublattice intermixing at the La0.7Sr0.3MnO3/BaTiO3 interfaces by direct local measurements of the structure and valence, which reveals the relationship between ferroelectric polarization directions and four-resistance states, and the low temperature anomalous tunneling behavior in the MFTJ. These findings emphasize the crucial role of the interfaces in MFTJs and are quite important for understanding the electric transport of MFTJs as well as designing high-density multistates storage devices.
UR - https://www.scopus.com/pages/publications/84966417099
UR - https://www.scopus.com/pages/publications/84966417099#tab=citedBy
U2 - 10.1021/acsami.6b02150
DO - 10.1021/acsami.6b02150
M3 - Article
C2 - 27055530
AN - SCOPUS:84966417099
SN - 1944-8244
VL - 8
SP - 10422
EP - 10429
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 16
ER -