Interfacial reactions between nickel thin films and GaN

H. S. Venugopalan, S. E. Mohney, B. P. Luther, S. D. Wolter, J. M. Redwing

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Thin Ni films on GaN were annealed at temperatures between 400 and 900°C in N2, Ar, and forming gas and were analyzed using glancing angle x-ray diffraction and Auger depth profiling. The first indication of an interfacial reaction was found after an anneal at 600°C for 1 h, after which Ga was observed to be dissolved in the face-centered cubic Ni film. The extent of dissolution increased with continued annealing. After annealing at 750°C for 1 hr in either N2 or Ar, greater intermixing occurred. The reaction product was either Ni3Ga or face-centered cubic Ni with dissolved Ga. Annealing at 900°C resulted in the formation of the B2 phase NiGa. It was clear from Auger depth profiles that the reacted film contained significantly more Ga than N and that N2 gas 1 was released to the annealing environment, even when the samples were annealed in N2 gas at 1 atm. Thus, a trend of increasing Ga content in the reacted films was observed with increasing temperature. The observed reactions are consistent with the thermodynamics of the Ni-Ga-N system.

Original languageEnglish (US)
Pages (from-to)650-654
Number of pages5
JournalJournal of Applied Physics
Issue number2
StatePublished - Jul 15 1997

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy


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