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Interfacial reactions between nickel thin films and GaN
H. S. Venugopalan
,
S. E. Mohney
, B. P. Luther
, S. D. Wolter
,
J. M. Redwing
Materials Science and Engineering
Materials Research Institute (MRI)
Research output
:
Contribution to journal
›
Article
›
peer-review
76
Scopus citations
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Keyphrases
Annealing
100%
Annealing Environment
16%
Ar Gas
16%
Auger Depth Profiling
33%
B2 Phase
16%
Diffraction
16%
Face-centered Cubic
33%
Forming Gas
16%
Ga Content
16%
Glancing Angle
16%
Increased Temperature
16%
Interfacial Reaction
100%
N-systems
16%
N2 Gas
50%
Ni Film
33%
Ni-Ga
33%
Nickel Thin Film
100%
Reaction Products
16%
Thermodynamics
16%
Material Science
Annealing
25%
Film
100%
Thin Films
100%
Engineering
Ga Content
50%
Glancing Angle
50%