Interfacial structure and ferroelectric properties of PZT/SrRuO3 heterostructures on MISCUT (001)SrTiO3

K. Wasa; Y. Ichikawa; H. Adachi; I. Kanno; K. Setsune; D. G. Schlom; S. Trolier-Mckinstry; Q. Gan; C. B. Eom

doi:10.1080/10584589908215608

Interfacial structure and ferroelectric properties of PZT/SrRuO₃ heterostructures on MISCUT (001)SrTiO₃

K. Wasa
, Y. Ichikawa
, H. Adachi
, I. Kanno
, K. Setsune
, D. G. Schlom
, S. Trolier-Mckinstry
, Q. Gan
, C. B. Eom

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

A heterostructure of (001)PZT(53/47)/(110)SrRuO₃(SRO) was deposited on a miscut (001)SrTiO₃(ST) substrate by a magnetron sputtering. The film thickness of the PZT and SRO ranged from 100 nm to 200 nm. The miscut angles were typically 1.7°. The heterostructure was grown on the miscut ST substrates under a step-flow growth. The heterostructure was tightly bonded to the ST substrate without an interfacial layer. The sputtered PZT thin films were tetragonally deformed with c=4.16 angstrom (bulk c-lattice parameter, 4.14 angstrom). A room temperature dielectric constant of the PZT thin films was 200 to 300 at 1 kHz. The P/E hysteresis measurements indicated that the saturation polarization P_s was 40 μ C/cm² with a coercive field E_c of 400 kV/cm to 500 kV/cm. The E_c observed was one order of magnitude higher than a bulk value for PZT. The high values of E_c were observed in a perfect c-domain orientation without an interfacial layer or 90° domains.

Original language	English (US)
Pages (from-to)	39-46
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	26
Issue number	1
DOIs	https://doi.org/10.1080/10584589908215608
State	Published - 1999
Event	The 11th International Symposium on Integrated Ferroelectrics (ISIF99) - Colorado Springs, CO, USA Duration: Mar 7 1999 → Mar 10 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Control and Systems Engineering
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1080/10584589908215608

Cite this

@article{99acb344684349ee8ab39ddb448a9eeb,

title = "Interfacial structure and ferroelectric properties of PZT/SrRuO3 heterostructures on MISCUT (001)SrTiO3",

abstract = "A heterostructure of (001)PZT(53/47)/(110)SrRuO3(SRO) was deposited on a miscut (001)SrTiO3(ST) substrate by a magnetron sputtering. The film thickness of the PZT and SRO ranged from 100 nm to 200 nm. The miscut angles were typically 1.7°. The heterostructure was grown on the miscut ST substrates under a step-flow growth. The heterostructure was tightly bonded to the ST substrate without an interfacial layer. The sputtered PZT thin films were tetragonally deformed with c=4.16 angstrom (bulk c-lattice parameter, 4.14 angstrom). A room temperature dielectric constant of the PZT thin films was 200 to 300 at 1 kHz. The P/E hysteresis measurements indicated that the saturation polarization Ps was 40 μ C/cm2 with a coercive field Ec of 400 kV/cm to 500 kV/cm. The Ec observed was one order of magnitude higher than a bulk value for PZT. The high values of Ec were observed in a perfect c-domain orientation without an interfacial layer or 90° domains.",

author = "K. Wasa and Y. Ichikawa and H. Adachi and I. Kanno and K. Setsune and Schlom, \{D. G.\} and S. Trolier-Mckinstry and Q. Gan and Eom, \{C. B.\}",

year = "1999",

doi = "10.1080/10584589908215608",

language = "English (US)",

volume = "26",

pages = "39--46",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

number = "1",

note = "The 11th International Symposium on Integrated Ferroelectrics (ISIF99) ; Conference date: 07-03-1999 Through 10-03-1999",

}

TY - JOUR

T1 - Interfacial structure and ferroelectric properties of PZT/SrRuO3 heterostructures on MISCUT (001)SrTiO3

AU - Wasa, K.

AU - Ichikawa, Y.

AU - Adachi, H.

AU - Kanno, I.

AU - Setsune, K.

AU - Schlom, D. G.

AU - Trolier-Mckinstry, S.

AU - Gan, Q.

AU - Eom, C. B.

PY - 1999

Y1 - 1999

N2 - A heterostructure of (001)PZT(53/47)/(110)SrRuO3(SRO) was deposited on a miscut (001)SrTiO3(ST) substrate by a magnetron sputtering. The film thickness of the PZT and SRO ranged from 100 nm to 200 nm. The miscut angles were typically 1.7°. The heterostructure was grown on the miscut ST substrates under a step-flow growth. The heterostructure was tightly bonded to the ST substrate without an interfacial layer. The sputtered PZT thin films were tetragonally deformed with c=4.16 angstrom (bulk c-lattice parameter, 4.14 angstrom). A room temperature dielectric constant of the PZT thin films was 200 to 300 at 1 kHz. The P/E hysteresis measurements indicated that the saturation polarization Ps was 40 μ C/cm2 with a coercive field Ec of 400 kV/cm to 500 kV/cm. The Ec observed was one order of magnitude higher than a bulk value for PZT. The high values of Ec were observed in a perfect c-domain orientation without an interfacial layer or 90° domains.

AB - A heterostructure of (001)PZT(53/47)/(110)SrRuO3(SRO) was deposited on a miscut (001)SrTiO3(ST) substrate by a magnetron sputtering. The film thickness of the PZT and SRO ranged from 100 nm to 200 nm. The miscut angles were typically 1.7°. The heterostructure was grown on the miscut ST substrates under a step-flow growth. The heterostructure was tightly bonded to the ST substrate without an interfacial layer. The sputtered PZT thin films were tetragonally deformed with c=4.16 angstrom (bulk c-lattice parameter, 4.14 angstrom). A room temperature dielectric constant of the PZT thin films was 200 to 300 at 1 kHz. The P/E hysteresis measurements indicated that the saturation polarization Ps was 40 μ C/cm2 with a coercive field Ec of 400 kV/cm to 500 kV/cm. The Ec observed was one order of magnitude higher than a bulk value for PZT. The high values of Ec were observed in a perfect c-domain orientation without an interfacial layer or 90° domains.

UR - https://www.scopus.com/pages/publications/0033324631

UR - https://www.scopus.com/pages/publications/0033324631#tab=citedBy

U2 - 10.1080/10584589908215608

DO - 10.1080/10584589908215608

M3 - Conference article

AN - SCOPUS:0033324631

SN - 1058-4587

VL - 26

SP - 39

EP - 46

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

IS - 1

T2 - The 11th International Symposium on Integrated Ferroelectrics (ISIF99)

Y2 - 7 March 1999 through 10 March 1999

ER -

Interfacial structure and ferroelectric properties of PZT/SrRuO₃ heterostructures on MISCUT (001)SrTiO₃

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this