Interfacial structure of photoresist thin films in developer solutions

Vivek M. Prabhu; Bryan D. Vogt; Wen Li Wu; Jack F. Douglas; Eric K. Lin; Sushil K. Satija; Dario L. Goldfarb; Hiroshi Ito

doi:10.1117/12.598956

Interfacial structure of photoresist thin films in developer solutions

Vivek M. Prabhu, Bryan D. Vogt, Wen Li Wu, Jack F. Douglas, Eric K. Lin, Sushil K. Satija, Dario L. Goldfarb, Hiroshi Ito

Chemical Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

A depth profile of the base developer counterion concentration within thin photoresist films was measured in-situ using contrast variant specular neutron reflectivity to characterize the initial swelling stage of the film dissolution. We find a substantial counterion depletion near the substrate and an enrichment near the periphery of the film extending into the solution. These observations challenge our understanding of the charge distribution in photoresist and polyelectrolyte films and are important for understanding film dissolution in medical and technological applications.

Original language	English (US)
Article number	34
Pages (from-to)	292-301
Number of pages	10
Journal	Progress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume	5753
Issue number	I
DOIs	https://doi.org/10.1117/12.598956
State	Published - 2005
Event	Advances in Resist Technology and Processing XXII - San Jose, CA, United States Duration: Feb 28 2005 → Mar 2 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Radiology Nuclear Medicine and imaging
Biomaterials

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10.1117/12.598956

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title = "Interfacial structure of photoresist thin films in developer solutions",

abstract = "A depth profile of the base developer counterion concentration within thin photoresist films was measured in-situ using contrast variant specular neutron reflectivity to characterize the initial swelling stage of the film dissolution. We find a substantial counterion depletion near the substrate and an enrichment near the periphery of the film extending into the solution. These observations challenge our understanding of the charge distribution in photoresist and polyelectrolyte films and are important for understanding film dissolution in medical and technological applications.",

author = "Prabhu, {Vivek M.} and Vogt, {Bryan D.} and Wu, {Wen Li} and Douglas, {Jack F.} and Lin, {Eric K.} and Satija, {Sushil K.} and Goldfarb, {Dario L.} and Hiroshi Ito",

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AU - Prabhu, Vivek M.

AU - Vogt, Bryan D.

AU - Wu, Wen Li

AU - Douglas, Jack F.

AU - Lin, Eric K.

AU - Satija, Sushil K.

AU - Goldfarb, Dario L.

AU - Ito, Hiroshi

PY - 2005

Y1 - 2005

N2 - A depth profile of the base developer counterion concentration within thin photoresist films was measured in-situ using contrast variant specular neutron reflectivity to characterize the initial swelling stage of the film dissolution. We find a substantial counterion depletion near the substrate and an enrichment near the periphery of the film extending into the solution. These observations challenge our understanding of the charge distribution in photoresist and polyelectrolyte films and are important for understanding film dissolution in medical and technological applications.

AB - A depth profile of the base developer counterion concentration within thin photoresist films was measured in-situ using contrast variant specular neutron reflectivity to characterize the initial swelling stage of the film dissolution. We find a substantial counterion depletion near the substrate and an enrichment near the periphery of the film extending into the solution. These observations challenge our understanding of the charge distribution in photoresist and polyelectrolyte films and are important for understanding film dissolution in medical and technological applications.

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EP - 301

JO - Progress in Biomedical Optics and Imaging - Proceedings of SPIE

JF - Progress in Biomedical Optics and Imaging - Proceedings of SPIE

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T2 - Advances in Resist Technology and Processing XXII

Y2 - 28 February 2005 through 2 March 2005

ER -

Interfacial structure of photoresist thin films in developer solutions

Abstract

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