Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures

M. J. Wilson; M. Zhu; R. C. Myers; D. D. Awschalom; P. Schiffer; N. Samarth

doi:10.1103/PhysRevB.81.045319

Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures

M. J. Wilson, M. Zhu, R. C. Myers, D. D. Awschalom, P. Schiffer, N. Samarth

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19 Scopus citations

Abstract

We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (Ga1-x Mnx As) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/ Ga1-x Mnx As bilayers accounts for the variation in the exchange-bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/ Ga1-x Mnx As trilayers and study the dependence of the exchange-bias field on the thickness of the spacer layer.

Original language	English (US)
Article number	045319
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	81
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.81.045319
State	Published - Jan 25 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.81.045319

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@article{8ffaefe7d0b045c1a243105bd6444e4b,

title = "Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures",

abstract = "We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (Ga1-x Mnx As) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/ Ga1-x Mnx As bilayers accounts for the variation in the exchange-bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/ Ga1-x Mnx As trilayers and study the dependence of the exchange-bias field on the thickness of the spacer layer.",

author = "Wilson, {M. J.} and M. Zhu and Myers, {R. C.} and Awschalom, {D. D.} and P. Schiffer and N. Samarth",

year = "2010",

month = jan,

day = "25",

doi = "10.1103/PhysRevB.81.045319",

language = "English (US)",

volume = "81",

journal = "Physical Review B - Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "4",

}

TY - JOUR

T1 - Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures

AU - Wilson, M. J.

AU - Zhu, M.

AU - Myers, R. C.

AU - Awschalom, D. D.

AU - Schiffer, P.

AU - Samarth, N.

PY - 2010/1/25

Y1 - 2010/1/25

N2 - We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (Ga1-x Mnx As) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/ Ga1-x Mnx As bilayers accounts for the variation in the exchange-bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/ Ga1-x Mnx As trilayers and study the dependence of the exchange-bias field on the thickness of the spacer layer.

AB - We describe a systematic study of the exchange coupling between a magnetically hard metallic ferromagnet (MnAs) and a magnetically soft ferromagnetic semiconductor (Ga1-x Mnx As) in bilayer and trilayer heterostructures. An exchange spring model of MnAs/ Ga1-x Mnx As bilayers accounts for the variation in the exchange-bias field with layer thickness and composition. We also present evidence for hole-mediated interlayer exchange coupling in MnAs/p-GaAs/ Ga1-x Mnx As trilayers and study the dependence of the exchange-bias field on the thickness of the spacer layer.

UR - http://www.scopus.com/inward/record.url?scp=77954833967&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954833967&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.81.045319

DO - 10.1103/PhysRevB.81.045319

M3 - Article

AN - SCOPUS:77954833967

SN - 1098-0121

VL - 81

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 4

M1 - 045319

ER -

Interlayer and interfacial exchange coupling in ferromagnetic metal/semiconductor heterostructures

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