Abstract
The internal photoemission method was used to measure the Schottky barrier height of Ni on AlGaN/GaN heterostructures. A barrier height of 1.31 eV was found for the Ni/Al0.15Ga0.85N/GaN heterojunction structure, as compared to a barrier height of 1.28 and 1.02 eV for the Ni/Al0.15Ga0.85N and Ni/GaN Schottky diodes, respectively.
Original language | English (US) |
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Pages (from-to) | 3917-3919 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 73 |
Issue number | 26 |
DOIs | |
State | Published - 1998 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)