Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure

L. S. Yu; Q. J. Xing; D. Qiao; S. S. Lau; K. S. Boutros; J. M. Redwing

doi:10.1063/1.122935

Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure

L. S. Yu, Q. J. Xing, D. Qiao, S. S. Lau, K. S. Boutros, J. M. Redwing

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Abstract

The internal photoemission method was used to measure the Schottky barrier height of Ni on AlGaN/GaN heterostructures. A barrier height of 1.31 eV was found for the Ni/Al_0.15Ga_0.85N/GaN heterojunction structure, as compared to a barrier height of 1.28 and 1.02 eV for the Ni/Al_0.15Ga_0.85N and Ni/GaN Schottky diodes, respectively.

Original language	English (US)
Pages (from-to)	3917-3919
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	26
DOIs	https://doi.org/10.1063/1.122935
State	Published - 1998

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.122935

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title = "Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure",

abstract = "The internal photoemission method was used to measure the Schottky barrier height of Ni on AlGaN/GaN heterostructures. A barrier height of 1.31 eV was found for the Ni/Al0.15Ga0.85N/GaN heterojunction structure, as compared to a barrier height of 1.28 and 1.02 eV for the Ni/Al0.15Ga0.85N and Ni/GaN Schottky diodes, respectively.",

author = "Yu, \{L. S.\} and Xing, \{Q. J.\} and D. Qiao and Lau, \{S. S.\} and Boutros, \{K. S.\} and Redwing, \{J. M.\}",

year = "1998",

doi = "10.1063/1.122935",

language = "English (US)",

volume = "73",

pages = "3917--3919",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "26",

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TY - JOUR

T1 - Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure

AU - Yu, L. S.

AU - Xing, Q. J.

AU - Qiao, D.

AU - Lau, S. S.

AU - Boutros, K. S.

AU - Redwing, J. M.

PY - 1998

Y1 - 1998

N2 - The internal photoemission method was used to measure the Schottky barrier height of Ni on AlGaN/GaN heterostructures. A barrier height of 1.31 eV was found for the Ni/Al0.15Ga0.85N/GaN heterojunction structure, as compared to a barrier height of 1.28 and 1.02 eV for the Ni/Al0.15Ga0.85N and Ni/GaN Schottky diodes, respectively.

AB - The internal photoemission method was used to measure the Schottky barrier height of Ni on AlGaN/GaN heterostructures. A barrier height of 1.31 eV was found for the Ni/Al0.15Ga0.85N/GaN heterojunction structure, as compared to a barrier height of 1.28 and 1.02 eV for the Ni/Al0.15Ga0.85N and Ni/GaN Schottky diodes, respectively.

UR - https://www.scopus.com/pages/publications/18644377686

UR - https://www.scopus.com/inward/citedby.url?scp=18644377686&partnerID=8YFLogxK

U2 - 10.1063/1.122935

DO - 10.1063/1.122935

M3 - Article

AN - SCOPUS:18644377686

SN - 0003-6951

VL - 73

SP - 3917

EP - 3919

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure

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