Intrinsic bistability in resonant-tunneling structures

J. O. Sofo; C. A. Balseiro

doi:10.1103/PhysRevB.42.7292

Intrinsic bistability in resonant-tunneling structures

J. O. Sofo, C. A. Balseiro

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30 Scopus citations

Abstract

We calculate in the effective-mass approximation the current-voltage characteristic for an AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructure. Our calculation includes the effect of electron-electron interaction in a self-consistent way. We show that charge accumulation in the quantum well is large enough to produce a bistability in the negative-differential-resistance region of the current-voltage curve.

Original language	English (US)
Pages (from-to)	7292-7295
Number of pages	4
Journal	Physical Review B
Volume	42
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.42.7292
State	Published - 1990

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1103/PhysRevB.42.7292

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title = "Intrinsic bistability in resonant-tunneling structures",

abstract = "We calculate in the effective-mass approximation the current-voltage characteristic for an AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructure. Our calculation includes the effect of electron-electron interaction in a self-consistent way. We show that charge accumulation in the quantum well is large enough to produce a bistability in the negative-differential-resistance region of the current-voltage curve.",

author = "Sofo, {J. O.} and Balseiro, {C. A.}",

year = "1990",

doi = "10.1103/PhysRevB.42.7292",

language = "English (US)",

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T1 - Intrinsic bistability in resonant-tunneling structures

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AU - Balseiro, C. A.

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N2 - We calculate in the effective-mass approximation the current-voltage characteristic for an AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructure. Our calculation includes the effect of electron-electron interaction in a self-consistent way. We show that charge accumulation in the quantum well is large enough to produce a bistability in the negative-differential-resistance region of the current-voltage curve.

AB - We calculate in the effective-mass approximation the current-voltage characteristic for an AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructure. Our calculation includes the effect of electron-electron interaction in a self-consistent way. We show that charge accumulation in the quantum well is large enough to produce a bistability in the negative-differential-resistance region of the current-voltage curve.

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U2 - 10.1103/PhysRevB.42.7292

DO - 10.1103/PhysRevB.42.7292

M3 - Article

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EP - 7295

JO - Physical Review B

JF - Physical Review B

IS - 11

ER -

Intrinsic bistability in resonant-tunneling structures

Abstract

All Science Journal Classification (ASJC) codes

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