Intrinsic bistability in resonant-tunneling structures

J. O. Sofo; C. A. Balseiro

doi:10.1103/PhysRevB.42.7292

Intrinsic bistability in resonant-tunneling structures

J. O. Sofo
, C. A. Balseiro

Physics

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We calculate in the effective-mass approximation the current-voltage characteristic for an AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructure. Our calculation includes the effect of electron-electron interaction in a self-consistent way. We show that charge accumulation in the quantum well is large enough to produce a bistability in the negative-differential-resistance region of the current-voltage curve.

Original language	English (US)
Pages (from-to)	7292-7295
Number of pages	4
Journal	Physical Review B
Volume	42
Issue number	11
DOIs	https://doi.org/10.1103/PhysRevB.42.7292
State	Published - 1990

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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10.1103/PhysRevB.42.7292

Cite this

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title = "Intrinsic bistability in resonant-tunneling structures",

abstract = "We calculate in the effective-mass approximation the current-voltage characteristic for an AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructure. Our calculation includes the effect of electron-electron interaction in a self-consistent way. We show that charge accumulation in the quantum well is large enough to produce a bistability in the negative-differential-resistance region of the current-voltage curve.",

author = "Sofo, \{J. O.\} and Balseiro, \{C. A.\}",

year = "1990",

doi = "10.1103/PhysRevB.42.7292",

language = "English (US)",

volume = "42",

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journal = "Physical Review B",

issn = "0163-1829",

publisher = "American Physical Society",

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T1 - Intrinsic bistability in resonant-tunneling structures

AU - Sofo, J. O.

AU - Balseiro, C. A.

PY - 1990

Y1 - 1990

N2 - We calculate in the effective-mass approximation the current-voltage characteristic for an AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructure. Our calculation includes the effect of electron-electron interaction in a self-consistent way. We show that charge accumulation in the quantum well is large enough to produce a bistability in the negative-differential-resistance region of the current-voltage curve.

AB - We calculate in the effective-mass approximation the current-voltage characteristic for an AlxGa1-xAs-GaAs-AlxGa1-xAs heterostructure. Our calculation includes the effect of electron-electron interaction in a self-consistent way. We show that charge accumulation in the quantum well is large enough to produce a bistability in the negative-differential-resistance region of the current-voltage curve.

UR - https://www.scopus.com/pages/publications/0013416156

UR - https://www.scopus.com/pages/publications/0013416156#tab=citedBy

U2 - 10.1103/PhysRevB.42.7292

DO - 10.1103/PhysRevB.42.7292

M3 - Article

AN - SCOPUS:0013416156

SN - 0163-1829

VL - 42

SP - 7292

EP - 7295

JO - Physical Review B

JF - Physical Review B

IS - 11

ER -

Intrinsic bistability in resonant-tunneling structures

Abstract

All Science Journal Classification (ASJC) codes

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