Intrinsic mobility limits of a two-dimensional electron gas in AlGaN/GaN heterostructures

W. Walukiewicz, L. Hsu, Joan Marie Redwing

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


We present the results of a theoretical study of the 2D electron gas mobility at a AlxGa1-x N/GaN heterointerface. All standard mechanisms, including scattering by acoustic and optical phonons, and remote and background (residual) impurities have been included in our calculation of theoretical mobility limits in a AlxGa1-xN/GaN structure. Comparison of calculations with experimental mobilities obtained from high quality MOCVD grown Al0.15Ga0.85N/GaN heterostructures shows that the low temperature mobility in these samples is dominated by scattering from ionized impurities, with a smaller contribution from acoustic phonons.

Original languageEnglish (US)
Pages (from-to)573-578
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Jan 1 1997

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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