Intrinsic stresses in AlN layers grown by metal organic chemical vapor deposition on (0001) sapphire and (111) Sl substrates

Srinivasan Raghavan; Joan M. Redwing

doi:10.1063/1.1777812

Intrinsic stresses in AlN layers grown by metal organic chemical vapor deposition on (0001) sapphire and (111) Sl substrates

Srinivasan Raghavan, Joan M. Redwing

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84 Scopus citations

Abstract

The growth of A1N on sapphire substrates was studied and compared to results obtained on Si to better understand the observed stress evolution. The films were characterized by x-ray diffraction and atomic force microscopy (AFM) to correlate the change in film structure with the measured variation in growth stress and study the effect of temperature and choice of substrate. The results were analyzed within the framework of the island coalescence model. The clear evidence for the presence of grain coalescence stresses in the systems were also presented.

Original language	English (US)
Pages (from-to)	2995-3003
Number of pages	9
Journal	Journal of Applied Physics
Volume	96
Issue number	5
DOIs	https://doi.org/10.1063/1.1777812
State	Published - Sep 1 2004

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.1777812

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title = "Intrinsic stresses in AlN layers grown by metal organic chemical vapor deposition on (0001) sapphire and (111) Sl substrates",

abstract = "The growth of A1N on sapphire substrates was studied and compared to results obtained on Si to better understand the observed stress evolution. The films were characterized by x-ray diffraction and atomic force microscopy (AFM) to correlate the change in film structure with the measured variation in growth stress and study the effect of temperature and choice of substrate. The results were analyzed within the framework of the island coalescence model. The clear evidence for the presence of grain coalescence stresses in the systems were also presented.",

author = "Srinivasan Raghavan and Redwing, {Joan M.}",

note = "Funding Information: This work was supported by the National Science Foundation under Grant Nos. ECS-0093742 and DMR-0076312.",

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AU - Raghavan, Srinivasan

AU - Redwing, Joan M.

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PY - 2004/9/1

Y1 - 2004/9/1

N2 - The growth of A1N on sapphire substrates was studied and compared to results obtained on Si to better understand the observed stress evolution. The films were characterized by x-ray diffraction and atomic force microscopy (AFM) to correlate the change in film structure with the measured variation in growth stress and study the effect of temperature and choice of substrate. The results were analyzed within the framework of the island coalescence model. The clear evidence for the presence of grain coalescence stresses in the systems were also presented.

AB - The growth of A1N on sapphire substrates was studied and compared to results obtained on Si to better understand the observed stress evolution. The films were characterized by x-ray diffraction and atomic force microscopy (AFM) to correlate the change in film structure with the measured variation in growth stress and study the effect of temperature and choice of substrate. The results were analyzed within the framework of the island coalescence model. The clear evidence for the presence of grain coalescence stresses in the systems were also presented.

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Intrinsic stresses in AlN layers grown by metal organic chemical vapor deposition on (0001) sapphire and (111) Sl substrates

Abstract

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