Abstract
High-quality Bi2Te3 films can be grown on Si by the state-of-art molecular beam epitaxy technique. In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well-developed Si technology.
Original language | English (US) |
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Pages (from-to) | 4002-4007 |
Number of pages | 6 |
Journal | Advanced Materials |
Volume | 22 |
Issue number | 36 |
DOIs | |
State | Published - Sep 22 2010 |
All Science Journal Classification (ASJC) codes
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering