Intrinsic topological insulator Bi 2 Te 3 thin films on si and their thickness limit

Yao Yi Li; Guang Wang; Xie Gang Zhu; Min Hao Liu; Cun Ye; Xi Chen; Ya Yu Wang; Ke He; Li Li Wang; Xu Cun Ma; Hai Jun Zhang; Xi Dai; Zhong Fang; Xin Cheng Xie; Ying Liu; Xiao Liang Qi; Jin Feng Jia; Shou Cheng Zhang; Qi Kun Xue

doi:10.1002/adma.201000368

Intrinsic topological insulator Bi 2 Te 3 thin films on si and their thickness limit

Yao Yi Li, Guang Wang, Xie Gang Zhu, Min Hao Liu, Cun Ye, Xi Chen, Ya Yu Wang, Ke He, Li Li Wang, Xu Cun Ma, Hai Jun Zhang, Xi Dai, Zhong Fang, Xin Cheng Xie, Ying Liu, Xiao Liang Qi, Jin Feng Jia, Shou Cheng Zhang, Qi Kun Xue

Research output: Contribution to journal › Article › peer-review

401 Scopus citations

Abstract

High-quality Bi2Te3 films can be grown on Si by the state-of-art molecular beam epitaxy technique. In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well-developed Si technology.

Original language	English (US)
Pages (from-to)	4002-4007
Number of pages	6
Journal	Advanced Materials
Volume	22
Issue number	36
DOIs	https://doi.org/10.1002/adma.201000368
State	Published - Sep 22 2010

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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Li, Y. Y., Wang, G., Zhu, X. G., Liu, M. H., Ye, C., Chen, X., Wang, Y. Y., He, K., Wang, L. L., Ma, X. C., Zhang, H. J., Dai, X., Fang, Z., Xie, X. C., Liu, Y., Qi, X. L., Jia, J. F., Zhang, S. C., & Xue, Q. K. (2010). Intrinsic topological insulator Bi 2 Te 3 thin films on si and their thickness limit. Advanced Materials, 22(36), 4002-4007. https://doi.org/10.1002/adma.201000368

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abstract = "High-quality Bi2Te3 films can be grown on Si by the state-of-art molecular beam epitaxy technique. In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well-developed Si technology.",

author = "Li, {Yao Yi} and Guang Wang and Zhu, {Xie Gang} and Liu, {Min Hao} and Cun Ye and Xi Chen and Wang, {Ya Yu} and Ke He and Wang, {Li Li} and Ma, {Xu Cun} and Zhang, {Hai Jun} and Xi Dai and Zhong Fang and Xie, {Xin Cheng} and Ying Liu and Qi, {Xiao Liang} and Jia, {Jin Feng} and Zhang, {Shou Cheng} and Xue, {Qi Kun}",

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doi = "10.1002/adma.201000368",

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AU - Li, Yao Yi

AU - Wang, Guang

AU - Zhu, Xie Gang

AU - Liu, Min Hao

AU - Ye, Cun

AU - Chen, Xi

AU - Wang, Ya Yu

AU - He, Ke

AU - Wang, Li Li

AU - Ma, Xu Cun

AU - Zhang, Hai Jun

AU - Dai, Xi

AU - Fang, Zhong

AU - Xie, Xin Cheng

AU - Liu, Ying

AU - Qi, Xiao Liang

AU - Jia, Jin Feng

AU - Zhang, Shou Cheng

AU - Xue, Qi Kun

PY - 2010/9/22

Y1 - 2010/9/22

N2 - High-quality Bi2Te3 films can be grown on Si by the state-of-art molecular beam epitaxy technique. In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well-developed Si technology.

AB - High-quality Bi2Te3 films can be grown on Si by the state-of-art molecular beam epitaxy technique. In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well-developed Si technology.

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JO - Advanced Materials

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ER -

Intrinsic topological insulator Bi 2 Te 3 thin films on si and their thickness limit

Abstract

All Science Journal Classification (ASJC) codes

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