Intrinsic topological insulator Bi 2 Te 3 thin films on si and their thickness limit

Yao Yi Li; Guang Wang; Xie Gang Zhu; Min Hao Liu; Cun Ye; Xi Chen; Ya Yu Wang; Ke He; Li Li Wang; Xu Cun Ma; Hai Jun Zhang; Xi Dai; Zhong Fang; Xin Cheng Xie; Ying Liu; Xiao Liang Qi; Jin Feng Jia; Shou Cheng Zhang; Qi Kun Xue

doi:10.1002/adma.201000368

Intrinsic topological insulator Bi 2 Te 3 thin films on si and their thickness limit

Yao Yi Li
, Guang Wang
, Xie Gang Zhu
, Min Hao Liu
, Cun Ye
, Xi Chen
, Ya Yu Wang
, Ke He
, Li Li Wang
, Xu Cun Ma
, Hai Jun Zhang
, Xi Dai
, Zhong Fang
, Xin Cheng Xie
, Ying Liu
, Xiao Liang Qi
, Jin Feng Jia
, Shou Cheng Zhang
, Qi Kun Xue

Physics

Research output: Contribution to journal › Article › peer-review

422 Scopus citations

Abstract

High-quality Bi2Te3 films can be grown on Si by the state-of-art molecular beam epitaxy technique. In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well-developed Si technology.

Original language	English (US)
Pages (from-to)	4002-4007
Number of pages	6
Journal	Advanced Materials
Volume	22
Issue number	36
DOIs	https://doi.org/10.1002/adma.201000368
State	Published - Sep 22 2010

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201000368

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Li, Y. Y., Wang, G., Zhu, X. G., Liu, M. H., Ye, C., Chen, X., Wang, Y. Y., He, K., Wang, L. L., Ma, X. C., Zhang, H. J., Dai, X., Fang, Z., Xie, X. C., Liu, Y., Qi, X. L., Jia, J. F., Zhang, S. C., & Xue, Q. K. (2010). Intrinsic topological insulator Bi 2 Te 3 thin films on si and their thickness limit. Advanced Materials, 22(36), 4002-4007. https://doi.org/10.1002/adma.201000368

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abstract = "High-quality Bi2Te3 films can be grown on Si by the state-of-art molecular beam epitaxy technique. In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well-developed Si technology.",

author = "Li, \{Yao Yi\} and Guang Wang and Zhu, \{Xie Gang\} and Liu, \{Min Hao\} and Cun Ye and Xi Chen and Wang, \{Ya Yu\} and Ke He and Wang, \{Li Li\} and Ma, \{Xu Cun\} and Zhang, \{Hai Jun\} and Xi Dai and Zhong Fang and Xie, \{Xin Cheng\} and Ying Liu and Qi, \{Xiao Liang\} and Jia, \{Jin Feng\} and Zhang, \{Shou Cheng\} and Xue, \{Qi Kun\}",

year = "2010",

month = sep,

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doi = "10.1002/adma.201000368",

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AU - Li, Yao Yi

AU - Wang, Guang

AU - Zhu, Xie Gang

AU - Liu, Min Hao

AU - Ye, Cun

AU - Chen, Xi

AU - Wang, Ya Yu

AU - He, Ke

AU - Wang, Li Li

AU - Ma, Xu Cun

AU - Zhang, Hai Jun

AU - Dai, Xi

AU - Fang, Zhong

AU - Xie, Xin Cheng

AU - Liu, Ying

AU - Qi, Xiao Liang

AU - Jia, Jin Feng

AU - Zhang, Shou Cheng

AU - Xue, Qi Kun

PY - 2010/9/22

Y1 - 2010/9/22

N2 - High-quality Bi2Te3 films can be grown on Si by the state-of-art molecular beam epitaxy technique. In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well-developed Si technology.

AB - High-quality Bi2Te3 films can be grown on Si by the state-of-art molecular beam epitaxy technique. In situ angle-resolved photo-emission spectroscopy measurement reveals that the as-grown films are intrinsic topological insulators and the single-Dirac-cone surface state develops at a thickness of two quintuple layers. The work opens a new avenue for engineering of topological materials based on well-developed Si technology.

UR - https://www.scopus.com/pages/publications/77957590661

UR - https://www.scopus.com/pages/publications/77957590661#tab=citedBy

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DO - 10.1002/adma.201000368

M3 - Article

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AN - SCOPUS:77957590661

SN - 0935-9648

VL - 22

SP - 4002

EP - 4007

JO - Advanced Materials

JF - Advanced Materials

IS - 36

ER -

Intrinsic topological insulator Bi 2 Te 3 thin films on si and their thickness limit

Abstract

All Science Journal Classification (ASJC) codes

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