Investigation into the early stages of oxide growth on gallium nitride

S. D. Wolter; J. M. Delucca; S. E. Mohney; R. S. Kern; C. P. Kuo

doi:10.1016/S0040-6090(00)00984-6

Investigation into the early stages of oxide growth on gallium nitride

S. D. Wolter, J. M. Delucca, S. E. Mohney, R. S. Kern, C. P. Kuo

Research output: Contribution to journal › Article › peer-review

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Abstract

The early stages of thermal oxidation of gallium nitride epilayers in dry O₂ have been studied using surface sensitive analytical techniques and transmission electron microscopy. Deconvolution of the Ga 3d core level spectra from X-ray photoelectron spectroscopy revealed peak positions representing gallium nitride, gallium oxide, and an intermediate phase. Transmission electron microscopy revealed an overlayer approximately 1.5-3.0 nm thick with registry to the (0001) GaN after dry oxidation at 800 °C for 1 h. Based on the data from X-ray photoelectron spectroscopy, this layer is believed to be a Ga_(x+2)N_3xO_(3-3x) compound. Atomic force microscopy and transmission electron microscopy revealed the formation of discrete oxide crystallites on top of the oxynitride layer. The crystallites become more numerous and grow with continued oxidation.

Original language	English (US)
Pages (from-to)	153-160
Number of pages	8
Journal	Thin Solid Films
Volume	371
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(00)00984-6
State	Published - Aug 1 2000

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(00)00984-6

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@article{c572ae56bce14618b1ed4fa15991af2c,

title = "Investigation into the early stages of oxide growth on gallium nitride",

abstract = "The early stages of thermal oxidation of gallium nitride epilayers in dry O2 have been studied using surface sensitive analytical techniques and transmission electron microscopy. Deconvolution of the Ga 3d core level spectra from X-ray photoelectron spectroscopy revealed peak positions representing gallium nitride, gallium oxide, and an intermediate phase. Transmission electron microscopy revealed an overlayer approximately 1.5-3.0 nm thick with registry to the (0001) GaN after dry oxidation at 800 °C for 1 h. Based on the data from X-ray photoelectron spectroscopy, this layer is believed to be a Ga(x+2)N3xO(3-3x) compound. Atomic force microscopy and transmission electron microscopy revealed the formation of discrete oxide crystallites on top of the oxynitride layer. The crystallites become more numerous and grow with continued oxidation.",

author = "Wolter, {S. D.} and Delucca, {J. M.} and Mohney, {S. E.} and Kern, {R. S.} and Kuo, {C. P.}",

note = "Funding Information: The authors would like to thank Professor Carlo G. Pantano for the many useful discussions that arose during this study. Funding for this research was provided by the National Science Foundation grant DMR-9624995.",

year = "2000",

month = aug,

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doi = "10.1016/S0040-6090(00)00984-6",

language = "English (US)",

volume = "371",

pages = "153--160",

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T1 - Investigation into the early stages of oxide growth on gallium nitride

AU - Wolter, S. D.

AU - Delucca, J. M.

AU - Mohney, S. E.

AU - Kern, R. S.

AU - Kuo, C. P.

N1 - Funding Information: The authors would like to thank Professor Carlo G. Pantano for the many useful discussions that arose during this study. Funding for this research was provided by the National Science Foundation grant DMR-9624995.

PY - 2000/8/1

Y1 - 2000/8/1

N2 - The early stages of thermal oxidation of gallium nitride epilayers in dry O2 have been studied using surface sensitive analytical techniques and transmission electron microscopy. Deconvolution of the Ga 3d core level spectra from X-ray photoelectron spectroscopy revealed peak positions representing gallium nitride, gallium oxide, and an intermediate phase. Transmission electron microscopy revealed an overlayer approximately 1.5-3.0 nm thick with registry to the (0001) GaN after dry oxidation at 800 °C for 1 h. Based on the data from X-ray photoelectron spectroscopy, this layer is believed to be a Ga(x+2)N3xO(3-3x) compound. Atomic force microscopy and transmission electron microscopy revealed the formation of discrete oxide crystallites on top of the oxynitride layer. The crystallites become more numerous and grow with continued oxidation.

AB - The early stages of thermal oxidation of gallium nitride epilayers in dry O2 have been studied using surface sensitive analytical techniques and transmission electron microscopy. Deconvolution of the Ga 3d core level spectra from X-ray photoelectron spectroscopy revealed peak positions representing gallium nitride, gallium oxide, and an intermediate phase. Transmission electron microscopy revealed an overlayer approximately 1.5-3.0 nm thick with registry to the (0001) GaN after dry oxidation at 800 °C for 1 h. Based on the data from X-ray photoelectron spectroscopy, this layer is believed to be a Ga(x+2)N3xO(3-3x) compound. Atomic force microscopy and transmission electron microscopy revealed the formation of discrete oxide crystallites on top of the oxynitride layer. The crystallites become more numerous and grow with continued oxidation.

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U2 - 10.1016/S0040-6090(00)00984-6

DO - 10.1016/S0040-6090(00)00984-6

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SN - 0040-6090

VL - 371

SP - 153

EP - 160

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Investigation into the early stages of oxide growth on gallium nitride

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