Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

O. Maksimov; B. Z. Liu

doi:10.1016/j.jcrysgro.2008.03.027

Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

O. Maksimov, B. Z. Liu

Nanofabrication Laboratory

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a Ga_xO_y layer at the ZnO/GaAs interface. Formation of an interfacial layer can prevent use of this technique for p-type doping and complicates identification of the origin of p-type response in the annealed ZnO/GaAs heterostructures.

Original language	English (US)
Pages (from-to)	3149-3153
Number of pages	5
Journal	Journal of Crystal Growth
Volume	310
Issue number	13
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.03.027
State	Published - Jun 15 2008

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2008.03.027

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title = "Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures",

abstract = "We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a GaxOy layer at the ZnO/GaAs interface. Formation of an interfacial layer can prevent use of this technique for p-type doping and complicates identification of the origin of p-type response in the annealed ZnO/GaAs heterostructures.",

author = "O. Maksimov and Liu, {B. Z.}",

note = "Funding Information: This work was partially supported by the Department of the Navy, Office of Naval Research under Grant N00014-07-1-0460. Any opinions, findings and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the Office of Naval Research. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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doi = "10.1016/j.jcrysgro.2008.03.027",

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T1 - Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

AU - Maksimov, O.

AU - Liu, B. Z.

N1 - Funding Information: This work was partially supported by the Department of the Navy, Office of Naval Research under Grant N00014-07-1-0460. Any opinions, findings and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the Office of Naval Research. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2008/6/15

Y1 - 2008/6/15

N2 - We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a GaxOy layer at the ZnO/GaAs interface. Formation of an interfacial layer can prevent use of this technique for p-type doping and complicates identification of the origin of p-type response in the annealed ZnO/GaAs heterostructures.

AB - We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a GaxOy layer at the ZnO/GaAs interface. Formation of an interfacial layer can prevent use of this technique for p-type doping and complicates identification of the origin of p-type response in the annealed ZnO/GaAs heterostructures.

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M3 - Article

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 13

ER -

Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

Abstract

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