Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

O. Maksimov; B. Z. Liu

doi:10.1016/j.jcrysgro.2008.03.027

Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

O. Maksimov
, B. Z. Liu

Nanofabrication Laboratory

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a Ga_xO_y layer at the ZnO/GaAs interface. Formation of an interfacial layer can prevent use of this technique for p-type doping and complicates identification of the origin of p-type response in the annealed ZnO/GaAs heterostructures.

Original language	English (US)
Pages (from-to)	3149-3153
Number of pages	5
Journal	Journal of Crystal Growth
Volume	310
Issue number	13
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.03.027
State	Published - Jun 15 2008

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2008.03.027

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@article{7e354b502b4a41f4b5f09178cf50a24d,

title = "Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures",

abstract = "We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a GaxOy layer at the ZnO/GaAs interface. Formation of an interfacial layer can prevent use of this technique for p-type doping and complicates identification of the origin of p-type response in the annealed ZnO/GaAs heterostructures.",

author = "O. Maksimov and Liu, \{B. Z.\}",

note = "Funding Information: This work was partially supported by the Department of the Navy, Office of Naval Research under Grant N00014-07-1-0460. Any opinions, findings and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the Office of Naval Research. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2008",

month = jun,

day = "15",

doi = "10.1016/j.jcrysgro.2008.03.027",

language = "English (US)",

volume = "310",

pages = "3149--3153",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "13",

}

TY - JOUR

T1 - Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

AU - Maksimov, O.

AU - Liu, B. Z.

N1 - Funding Information: This work was partially supported by the Department of the Navy, Office of Naval Research under Grant N00014-07-1-0460. Any opinions, findings and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the Office of Naval Research. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2008/6/15

Y1 - 2008/6/15

N2 - We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a GaxOy layer at the ZnO/GaAs interface. Formation of an interfacial layer can prevent use of this technique for p-type doping and complicates identification of the origin of p-type response in the annealed ZnO/GaAs heterostructures.

AB - We synthesized ZnO films via oxidative annealing of ZnSe/GaAs heterostructures and investigated their structural and optical properties. Films were polycrystalline, c-axis oriented and exhibited superior optical properties. In addition, we detected nanometer-size As clusters into the ZnO film and a GaxOy layer at the ZnO/GaAs interface. Formation of an interfacial layer can prevent use of this technique for p-type doping and complicates identification of the origin of p-type response in the annealed ZnO/GaAs heterostructures.

UR - https://www.scopus.com/pages/publications/44549088053

UR - https://www.scopus.com/pages/publications/44549088053#tab=citedBy

U2 - 10.1016/j.jcrysgro.2008.03.027

DO - 10.1016/j.jcrysgro.2008.03.027

M3 - Article

AN - SCOPUS:44549088053

SN - 0022-0248

VL - 310

SP - 3149

EP - 3153

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 13

ER -

Investigation of As-doped ZnO films synthesized via thermal annealing of ZnSe/GaAs heterostructures

Abstract

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