@inproceedings{3b932b12d9a345d388f92bb81cc75593,
title = "Investigation of InxGa1-xAs FinFET architecture with varying indium (x) concentration and quantum confinement",
abstract = "InxGa1-xAs FinFETs with varying indium percentage, x, and vertical body thicknesses, are fabricated in a closely packed fin configuration (10 fins per micron of layout area) and their relative performance analyzed and benchmarked. In0.7Ga0.3As quantum well FinFET (QWFF) exhibits peak field effect mobility of 3,000 cm2/V-sec at a fin width of 38nm with highest performance. Short channel In0.7Ga0.3As QWFF (Lg=120nm) exhibits IDSAT of 1.16mA/μm at VG-VT=1V and extrinsic peak gm=1.9mS/μm at VDS=0.5V and IOFF=30 nA/μm. Components of external resistance (RExt), side wall DIT, fin profile are analyzed to investigate feasibility of InxGa1-xAs FinFET for beyond 10nm technology node.",
author = "Vt Arun and Nidhi Agrawal and Guy Lavallee and Mirco Cantoro and Kim, {Sang Su} and Kim, {Dong Won} and Suman Datta",
year = "2014",
month = sep,
day = "8",
doi = "10.1109/VLSIT.2014.6894372",
language = "English (US)",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "Digest of Technical Papers - Symposium on VLSI Technology",
address = "United States",
note = "34th Symposium on VLSI Technology, VLSIT 2014 ; Conference date: 09-06-2014 Through 12-06-2014",
}