Investigation of InxGa1-xAs FinFET architecture with varying indium (x) concentration and quantum confinement

Vt Arun; Nidhi Agrawal; Guy Lavallee; Mirco Cantoro; Sang Su Kim; Dong Won Kim; Suman Datta

doi:10.1109/VLSIT.2014.6894372

Investigation of In_xGa_1-xAs FinFET architecture with varying indium (x) concentration and quantum confinement

Vt Arun, Nidhi Agrawal, Guy Lavallee, Mirco Cantoro, Sang Su Kim, Dong Won Kim, Suman Datta

Materials Research Institute (MRI)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Scopus citations

Abstract

In_xGa_1-xAs FinFETs with varying indium percentage, x, and vertical body thicknesses, are fabricated in a closely packed fin configuration (10 fins per micron of layout area) and their relative performance analyzed and benchmarked. In_0.7Ga_0.3As quantum well FinFET (QWFF) exhibits peak field effect mobility of 3,000 cm²/V-sec at a fin width of 38nm with highest performance. Short channel In_0.7Ga_0.3As QWFF (L_g=120nm) exhibits I_DSAT of 1.16mA/μm at V_G-V_T=1V and extrinsic peak g_m=1.9mS/μm at V_DS=0.5V and I_OFF=30 nA/μm. Components of external resistance (R_Ext), side wall DIT, fin profile are analyzed to investigate feasibility of In_xGa_1-xAs FinFET for beyond 10nm technology node.

Original language	English (US)
Title of host publication	Digest of Technical Papers - Symposium on VLSI Technology
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479933310
DOIs	https://doi.org/10.1109/VLSIT.2014.6894372
State	Published - Sep 8 2014
Event	34th Symposium on VLSI Technology, VLSIT 2014 - Honolulu, United States Duration: Jun 9 2014 → Jun 12 2014

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	34th Symposium on VLSI Technology, VLSIT 2014
Country/Territory	United States
City	Honolulu
Period	6/9/14 → 6/12/14

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/VLSIT.2014.6894372

Cite this

Arun, V., Agrawal, N., Lavallee, G., Cantoro, M., Kim, S. S., Kim, D. W., & Datta, S. (2014). Investigation of In_xGa_1-xAs FinFET architecture with varying indium (x) concentration and quantum confinement. In Digest of Technical Papers - Symposium on VLSI Technology Article 6894372 (Digest of Technical Papers - Symposium on VLSI Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2014.6894372

@inproceedings{3b932b12d9a345d388f92bb81cc75593,

title = "Investigation of InxGa1-xAs FinFET architecture with varying indium (x) concentration and quantum confinement",

abstract = "InxGa1-xAs FinFETs with varying indium percentage, x, and vertical body thicknesses, are fabricated in a closely packed fin configuration (10 fins per micron of layout area) and their relative performance analyzed and benchmarked. In0.7Ga0.3As quantum well FinFET (QWFF) exhibits peak field effect mobility of 3,000 cm2/V-sec at a fin width of 38nm with highest performance. Short channel In0.7Ga0.3As QWFF (Lg=120nm) exhibits IDSAT of 1.16mA/μm at VG-VT=1V and extrinsic peak gm=1.9mS/μm at VDS=0.5V and IOFF=30 nA/μm. Components of external resistance (RExt), side wall DIT, fin profile are analyzed to investigate feasibility of InxGa1-xAs FinFET for beyond 10nm technology node.",

author = "Vt Arun and Nidhi Agrawal and Guy Lavallee and Mirco Cantoro and Kim, {Sang Su} and Kim, {Dong Won} and Suman Datta",

year = "2014",

month = sep,

day = "8",

doi = "10.1109/VLSIT.2014.6894372",

language = "English (US)",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "Digest of Technical Papers - Symposium on VLSI Technology",

address = "United States",

note = "34th Symposium on VLSI Technology, VLSIT 2014 ; Conference date: 09-06-2014 Through 12-06-2014",

}

Arun, V, Agrawal, N, Lavallee, G, Cantoro, M, Kim, SS, Kim, DW & Datta, S 2014, Investigation of In_xGa_1-xAs FinFET architecture with varying indium (x) concentration and quantum confinement. in Digest of Technical Papers - Symposium on VLSI Technology., 6894372, Digest of Technical Papers - Symposium on VLSI Technology, Institute of Electrical and Electronics Engineers Inc., 34th Symposium on VLSI Technology, VLSIT 2014, Honolulu, United States, 6/9/14. https://doi.org/10.1109/VLSIT.2014.6894372

Investigation of In_xGa_1-xAs FinFET architecture with varying indium (x) concentration and quantum confinement. / Arun, Vt; Agrawal, Nidhi; Lavallee, Guy et al.
Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc., 2014. 6894372 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Investigation of InxGa1-xAs FinFET architecture with varying indium (x) concentration and quantum confinement

AU - Arun, Vt

AU - Agrawal, Nidhi

AU - Lavallee, Guy

AU - Cantoro, Mirco

AU - Kim, Sang Su

AU - Kim, Dong Won

AU - Datta, Suman

PY - 2014/9/8

Y1 - 2014/9/8

N2 - InxGa1-xAs FinFETs with varying indium percentage, x, and vertical body thicknesses, are fabricated in a closely packed fin configuration (10 fins per micron of layout area) and their relative performance analyzed and benchmarked. In0.7Ga0.3As quantum well FinFET (QWFF) exhibits peak field effect mobility of 3,000 cm2/V-sec at a fin width of 38nm with highest performance. Short channel In0.7Ga0.3As QWFF (Lg=120nm) exhibits IDSAT of 1.16mA/μm at VG-VT=1V and extrinsic peak gm=1.9mS/μm at VDS=0.5V and IOFF=30 nA/μm. Components of external resistance (RExt), side wall DIT, fin profile are analyzed to investigate feasibility of InxGa1-xAs FinFET for beyond 10nm technology node.

AB - InxGa1-xAs FinFETs with varying indium percentage, x, and vertical body thicknesses, are fabricated in a closely packed fin configuration (10 fins per micron of layout area) and their relative performance analyzed and benchmarked. In0.7Ga0.3As quantum well FinFET (QWFF) exhibits peak field effect mobility of 3,000 cm2/V-sec at a fin width of 38nm with highest performance. Short channel In0.7Ga0.3As QWFF (Lg=120nm) exhibits IDSAT of 1.16mA/μm at VG-VT=1V and extrinsic peak gm=1.9mS/μm at VDS=0.5V and IOFF=30 nA/μm. Components of external resistance (RExt), side wall DIT, fin profile are analyzed to investigate feasibility of InxGa1-xAs FinFET for beyond 10nm technology node.

UR - http://www.scopus.com/inward/record.url?scp=84907681097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907681097&partnerID=8YFLogxK

U2 - 10.1109/VLSIT.2014.6894372

DO - 10.1109/VLSIT.2014.6894372

M3 - Conference contribution

AN - SCOPUS:84907681097

T3 - Digest of Technical Papers - Symposium on VLSI Technology

BT - Digest of Technical Papers - Symposium on VLSI Technology

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 34th Symposium on VLSI Technology, VLSIT 2014

Y2 - 9 June 2014 through 12 June 2014

ER -

Arun V, Agrawal N, Lavallee G, Cantoro M, Kim SS, Kim DW et al. Investigation of In_xGa_1-xAs FinFET architecture with varying indium (x) concentration and quantum confinement. In Digest of Technical Papers - Symposium on VLSI Technology. Institute of Electrical and Electronics Engineers Inc. 2014. 6894372. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2014.6894372