Investigation of magnetic field attacks on commercial Magneto-Resistive Random Access Memory

Alexander Holst, Jae Won Jang, Swaroop Ghosh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

In this work, we use a Field-Programmable Gate Array (FPGA) based memory testing setup to study the susceptibility of Magneto-Resistive Random Access Memory (MRAM) to interference by externally applied magnetic fields. We use a rare earth magnet field source to compare the transient and residual bit error response due to increasing magnetic field strengths and orientation during memory read, write and retention. Results indicate that the transient and residual error response in MRAM is proportional to applied field strength. Furthermore, MRAM displays resistance to disturbance during read interference and is more susceptible to destructive error during write-cycle magnetic interference.

Original languageEnglish (US)
Title of host publicationProceedings of the 18th International Symposium on Quality Electronic Design, ISQED 2017
PublisherIEEE Computer Society
Pages155-160
Number of pages6
ISBN (Electronic)9781509054046
DOIs
StatePublished - May 2 2017
Event18th International Symposium on Quality Electronic Design, ISQED 2017 - Santa Clara, United States
Duration: Mar 14 2017Mar 15 2017

Publication series

NameProceedings - International Symposium on Quality Electronic Design, ISQED
ISSN (Print)1948-3287
ISSN (Electronic)1948-3295

Other

Other18th International Symposium on Quality Electronic Design, ISQED 2017
Country/TerritoryUnited States
CitySanta Clara
Period3/14/173/15/17

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Fingerprint

Dive into the research topics of 'Investigation of magnetic field attacks on commercial Magneto-Resistive Random Access Memory'. Together they form a unique fingerprint.

Cite this