Investigation of room-temperature ion beam hydrogenation for the removal of traps in silicon ion beam damaged metal-oxide-silicon structures

Keyphrases

• Ion Beam 100%
• Room Temperature 100%
• Silicon Structure 100%
• Metal Oxide 100%
• Hydrogenation 100%
• Silicon Ions 100%
• H Ions 50%
• Oxides 25%
• Hydrogenated 25%
• Current-voltage 25%
• Frequency Estimation 25%
• Radiation Effects 25%
• Induced Damage 25%
• Radiation Damage 25%
• Silicon Wafer 25%
• Voltage Frequency 25%
• Nature of Interactions 25%
• Defect Complexes 25%
• Passivation 25%
• Room-temperature Hydrogenation 25%
• Si Ions 25%
• Electrically Active Defects 25%
• Electronic Trap 25%

Material Science

• Silicon 100%
• Metal Oxide 100%
• Hydrogenation 100%
• Silicon Ion 100%
• Oxide Compound 20%
• Radiation Damage 20%
• Silicon Wafer 20%