Investigation of SILC via energy resolved spin dependent tunneling spectroscopy

Keyphrases

• Capacitance 100%
• Energy-resolved 100%
• Tunneling Spectroscopy 100%
• Spin-dependent Tunneling 100%
• Circuitry 50%
• High Electric Field 50%
• Doped Silicon 50%
• Thin Dielectric 50%
• Depletion Layer 50%
• Defect Energy 50%
• Energy Levels 50%
• Equivalent Oxide Thickness 50%
• Silicon Oxynitride (SiON) 50%
• Direct Way 50%
• Point Defect Structure 50%
• Defect Energy Level 50%
• Structure Level 50%
• Voltage Control 50%
• Solid-state Electronics 50%
• Device Instability 50%

Material Science

• Silicon 100%
• Capacitance 100%
• Film 50%
• Oxide Compound 50%
• Oxynitride 50%
• Point Defect 50%
• Dielectric Material 50%
• Crystal Defect 50%